Exposure apparatus, exposure method, and method for producing device

ABSTRACT

An exposure apparatus includes a nozzle member, a nozzle driving system having an actuator by which the nozzle member is moved, and a controller. The nozzle member includes a liquid supply port from which immersion liquid is supplied, a liquid recovery port via which the supplied immersion liquid is recovered, and a gas supply port via which a gas is supplied. The liquid supply port, the liquid recovery port and the gas supply port face downwardly, the liquid recovery port is arranged radially outward of the liquid supply port with respect to a path of the exposure light, and the gas supply port is arranged radially outward of the liquid recovery port with respect to the path. The controller controls the nozzle driving system based on information on a movement of a substrate stage.

TECHNICAL FIELD

This is a Continuation of U.S. application Ser. No. 14/145,136 filedDec. 31, 2013, which in turn is a Continuation of U.S. application Ser.No. 11/662,729 filed Mar. 14, 2007, which is a National Stage ofInternational Application No. PCT/JP2005/017163 filed Sep. 16, 2005, andwhich claims the priority of Japanese Application No. 2004-271635 filedSep. 17, 2004 and Japanese Application No. 2004-274990 filed Sep. 22,2004. The disclosure of each of the prior applications is herebyincorporated by reference herein in its entirety.

The present invention relates to an exposure apparatus, an exposuremethod, and a method for producing a device, in which a substrate isexposed through a liquid.

BACKGROUND ART

An exposure apparatus, which projects a pattern formed on a mask onto aphotosensitive substrate to perform the exposure, is used in thephotolithography step as one of the steps of producing microdevices suchas semiconductor devices, liquid crystal display devices and the like.The exposure apparatus includes a mask stage for supporting the mask anda substrate stage for supporting the substrate. The pattern of the maskis subjected to the projection exposure onto the substrate via aprojection optical system while successively moving the mask stage andthe substrate stage. In the microdevice production, it is required torealize a fine and minute pattern to be formed on the substrate in orderto achieve a high density of the device. In order to respond to thisrequirement, it is demanded to realize a higher resolution of theexposure apparatus. A liquid immersion exposure apparatus, in which theexposure process is performed in such a state that the space between theprojection optical system and the substrate is tilled with a liquidhaving a refractive index higher than that of the gas, has beencontrived as one of means to realize the high resolution, as disclosedin Patent Document 1 as identified below.

PATENT DOCUMENT 1: International Publication No. 99/49504.

DISCLOSURE OF THE INVENTION Problem to be Solved by the Invention

In the liquid immersion exposure apparatus, it is necessary that theliquid is satisfactorily retained between the projection optical systemand an object (substrate and stage) arranged opposite to the projectionoptical system. If the liquid is not retained satisfactorily, there issuch a high possibility that the liquid may outflow, the liquid may bediffused, and/or any bubble or any gas portion (void) may enter into andmix with the liquid. If the liquid outflows, for example, there is sucha possibility that the outflowed liquid may be adhered to any equipmentconstructing the exposure apparatus to cause the malfunction of theequipment. When the equipment is any measuring instrument there is sucha possibility that the measurement accuracy of the measuring instrumentmay be deteriorated by the outflowed liquid. If the malfunction of theequipment and/or the deterioration of the measurement accuracy is causedas described above, the exposure accuracy of the exposure apparatus isdeteriorated as well. Further, for example, if any bubble or any gasportion (void) enters into and mixes with the liquid between theprojection optical system and the substrate, the pattern transferaccuracy onto the substrate is deteriorated.

In the conventional technique as described above, the liquid is suppliedand recovered by using a nozzle member. However, when any vibration isgenerated on the nozzle member, if the vibration is transmitted, forexample, to the projection optical system, then there is such apossibility that the transfer accuracy of the pattern onto thesubstrate, which is to be obtained via the projection optical system andthe liquid, may be deteriorated.

The present invention has been made taking the foregoing circumstancesinto consideration, an object of which is to provide an exposureapparatus, an exposure method, and a method for producing a device usingthe exposure apparatus and the exposure method, wherein the liquid canbe retained satisfactorily, and the exposure process care be performedaccurately.

Means for Solving the Problem

In order to achieve the object as described above, the present inventionadopts the following constructions.

According to a first aspect of the present invention, there is providedan exposure apparatus which exposes a substrate through a liquid of aliquid immersion area, the exposure apparatus comprising: a nozzlemember which has at least one of a supply port for supplying the liquidand a recovery port for recovering the liquid; and a nozzle-adjustingmechanism which adjusts at least one of a position and an inclination ofthe nozzle member depending on a position of a surface of an objectarranged opposite to the nozzle member.

According to the first aspect of the present invention, the liquid isretained between the nozzle member and the object. However, thenozzle-adjusting mechanism adjusts at least one of the position and theinclination of the nozzle member depending on the position of thesurface (surface position) of the object. Accordingly, the positionalrelationship between the nozzle member and the object can be maintainedin a desired state. Therefore, for example, even when the surfaceposition of the substrate or the substrate stage as the object ischanged during the exposure, at least one of the position and theinclination of the nozzle member is adjusted depending on the change ofthe surface position. Accordingly, the liquid is satisfactorily retainedbetween the nozzle member and the substrate. Therefore, it is possibleto suppress the outflow of the liquid and prevent the bubble and/or thegas portion or the void from entering into and mixing with the liquid.Thus, the exposure apparatus can perform the exposure processaccurately.

According to a second aspect of the present invention, there is provideda method for producing a device, comprising using the exposure apparatusas defined in the foregoing aspect.

According to the second aspect of the present invention, the device canbe produced in a state in which the high exposure accuracy ismaintained. Therefore, it is possible to produce the device whichexhibits the desired performance.

According to a third aspect of the present invention, there is providedan exposure method for exposing a substrate through a liquid on thesubstrate, the exposure method comprising; providing the liquid to aspace between the substrate and a nozzle member having at least one of asupply port for supplying the liquid and a recovery port for recoveringthe liquid; adjusting at least one of a position and an inclination ofthe nozzle member depending on a position of a surface of an objectarranged opposite to the nozzle member; and exposing the substratethrough the liquid.

According to the exposure method of the present invention, at least oneof the position and the inclination of the nozzle member is adjusteddepending on the surface position of the object. Accordingly, thepositional relationship between the nozzle member and the object can bemaintained in a desired state. Therefore, for example, even when thesurface position of the substrate or the substrate stage as the objectis changed during the exposure, at least one of the position and theinclination of the nozzle member is adjusted depending on the change ofthe surface position. Accordingly, the liquid is satisfactorily retainedbetween the nozzle member and the substrate. Therefore, it is possibleto suppress the outflow of the liquid and the entrance and mixing of thebubble and/or the gas portion or the void into and with the liquid. Itis thus possible to perform the exposure process accurately.

According to a fourth aspect of the present invention, there is provideda method for producing a device, comprising: exposing a substrate by theexposure method; developing the exposed substrate; and processing thedeveloped substrate. According to this production method, the device canbe produced in a state in which the high exposure accuracy ismaintained. Therefore, it is possible to produce the device whichexhibits the desired performance.

Effect of the Invention

According to the present invention, the exposure process can beperformed accurately while retaining the liquid satisfactorily. It ispossible to produce the device having the desired performance.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 shows a schematic arrangement view illustrating an exposureapparatus according to a first embodiment.

FIG. 2 shows a magnified sectional view illustrating main componentsshown in FIG. 1.

FIG. 3 shows a view illustrating a nozzle member as viewed from thelower side.

FIGS. 4(A) to 4(C) schematically illustrate the operation of the nozzlemember.

FIG. 5 schematically illustrates the behavior of the liquid of theliquid immersion area.

FIG. 6 shows an exposure apparatus according to a second embodiment.

FIG. 7 shows an exposure apparatus according to a third embodiment.

FIG. 8 shows an exposure apparatus according to a fourth embodiment.

FIG. 9 shows an exposure apparatus according to a fifth embodiment.

FIG. 10 shows a plan view schematically illustrating a positionalrelationship between a substrate and blow members connected to a nozzlemember.

FIG. 11 shows an exposure apparatus according to a sixth embodiment.

FIG. 12 shows a schematic arrangement illustrating an exposure apparatusaccording to a seventh embodiment.

FIG. 13 shows a magnified sectional view illustrating main componentsshown in FIG. 12.

FIG. 14 schematically illustrates the behavior of the liquid of theliquid immersion area in the seventh embodiment.

FIG. 15 schematically illustrates the behavior of the liquid of theliquid immersion area in the seventh embodiment.

FIG. 16 shows an exposure apparatus according to an eighth embodiment.

FIG. 17 shows a flow chart illustrating exemplary steps of producing amicrodevice.

BEST MODE FOR CARRYING OUT THE INVENTION

Embodiments of the present invention will be explained below withreference to the drawings. However, the present invention is not limitedto the embodiments.

First Embodiment

FIG. 1 is a schematic arrangement view illustrating an exposureapparatus EX according to a first embodiment. With reference to FIG. 1,the exposure apparatus EX includes a mask stage MST which is movablewhile holding a mask M, a substrate stage PST which is movable whileholding a substrate P, an illumination optical system IL whichilluminates, with an exposure light beam EL, the mask M held by the maskstage MST, a projection optical system PL which projects an image of apattern of the mask M illuminated with the exposure light beam EL ontothe substrate P held by the substrate stage PST to perform the exposure,and a control unit CONT which integrally controls the operation of theentire exposure apparatus EX. A storage unit MRY, which storesinformation in relation to the exposure process, is connected to thecontrol unit CONT.

The exposure apparatus EX of this embodiment is a liquid immersionexposure apparatus to which the liquid immersion method is applied inorder that the exposure wavelength is substantially shortened to improvethe resolution and the depth of focus is substantially widened. Theexposure apparatus EX is provided with a liquid immersion mechanism 100which forms a liquid immersion area AR2 of the liquid LQ on thesubstrate P. The liquid immersion mechanism 100 includes an annularnozzle member 70 which is provided over or above the substrate P(substrate stage PST) and which is disposed to surround the projectionoptical system PL in the vicinity of the end portion of the projectionoptical system PL on a side of an image plane, a liquid supply mechanism10 which supplies the liquid LQ onto the substrate P via supply ports 12provided for the nozzle member 70, and a liquid recovery mechanism 20which recovers the liquid LQ on the substrate P via a recovery port 22provided for the nozzle member 70. In this embodiment, the nozzle member70 is provided with a first nozzle member 71 which has the supply ports12 for supplying the liquid LQ, and a second nozzle member 72 which hasthe recovery port 22 for recovering the liquid LQ. The first nozzlemember 71 and the second nozzle member 72 are distinct (separate)members, and they are not mechanically connected to each other. Thefirst nozzle member 71 is provided in an annular form to surround thevicinity of the end portion of the projection optical system PL on theside of the image plane, over or above the substrate P (substrate stagePST). The second nozzle member 72 is provided in an annular form tosurround an outer side of the first nozzle member 71, over or above thesubstrate P (substrate stage PST).

The exposure apparatus EX forms the liquid immersion area AR2 locally ona part of the substrate P, including a projection area AR1 of theprojection optical system PL by the liquid LQ supplied from the liquidsupply mechanism 10 at least during the period in which the image of thepattern of the mask M is transferred onto the substrate P, the liquidimmersion area AR2 being larger than the projection area AR1 and smallerthan the substrate P. Specifically, the exposure apparatus EX adopts thelocal liquid immersion system wherein the space between an opticalelement LS1 which is arranged at the end portion of the projectionoptical system PL on the side of the image plane and a surface of thesubstrate P which is arranged on the side of the image plane, is filledwith the liquid LQ. The exposure light beam EL, passes through the maskM, is radiated onto the substrate P through the liquid LQ between theprojection optical system PL and the substrate P and via the projectionoptical system PL. Accordingly, the pattern of the mask M is projectedonto the substrate P and exposes the pattern on the substrate P. Thecontrol unit CONT locally forms the liquid immersion area AR2 of theliquid LQ on the substrate P by supplying a predetermined amount of theliquid LQ onto the substrate P with the liquid supply mechanism 10, andby recovering a predetermined amount of the liquid LQ on the substrate Pwith the liquid recovery mechanism 20.

The exposure apparatus EX includes a nozzle-adjusting mechanism 80 whichadjusts at least any one of the position and the posture (inclination)of the nozzle member 70 depending on a position of the surface (surfaceposition) of the substrate P. The nozzle-adjusting mechanism 80 includesa driving mechanism 83 which is capable of driving the nozzle member 70to adjust at least one of the relative distance and the relativeinclination between the surface of the substrate P and at least a partof a lower surface 70A of the nozzle member 70. The lower surface 70A ofthe nozzle member 70 herein includes a lower surface 71A of the firstnozzle member 71 and/or a lower surface 72A of the second nozzle member72. The lower surface 70A of the nozzle member 70 is the surface whichis opposed to (facing) the surface of the substrate P supported by thesubstrate stage PST. Therefore, the nozzle-adjusting mechanism 80adjusts at least one of the relative distance and the relativeinclination between the surface of the substrate P and at least one ofthe lower surfaces 71A, 72A. In the following description, the lowersurfaces 71A, 72A of the first and second nozzle members 71, 72, whichare opposed to the surface of the substrate P, are appropriatelyreferred to as “lower surface 70A of the nozzle member 70” incombination.

The embodiment of the present invention will be explained as exemplifiedby a case in which the present invention is used in a scanning typeexposure apparatus (so-called scanning stepper) as the exposureapparatus EX in which the substrate P is exposed with the pattern formedon the mask M while synchronously moving the mask M and the substrate Pin mutually different directions (opposite directions) in the scanningdirections. Of course, it is also allowable to use the present inventionin a scanning type exposure apparatus in which the mask M and thesubstrate P are synchronously moved in a same scanning direction. In thefollowing explanation, a Z axis direction is the direction which iscoincident with an optical axis AX of the projection optical system PL,a X axis direction is a synchronous movement direction (scanningdirection) for the mask M and the substrate P in a plane perpendicularto the Z axis direction, and a Y axis direction is a direction(non-scanning direction) which is perpendicular to the Z axis directionand the X axis direction. Directions of rotation (inclination) about theX axis, the axis, and the Z axis are designated as θX, θY, and θZdirections respectively.

The exposure apparatus EX includes a base 9 which is provided on thefloor surface, and a main column 1 which is installed on the base 9. Themain column 1 is formed with an upper stepped portion 7 and a lowerstepped portion 8 which protrude inwardly. The illumination opticalsystem IL is provided so that the mask M, which is supported on the maskstage MST, is illuminated with the exposure light beam EL. Theillumination optical system IL is supported by a support frame 3 whichis fixed to an upper portion of the main column 1.

The illumination optical system EL includes, for example, an exposurelight source, an optical integrator which uniformizes the illuminance oflight flux radiated froth the exposure light source, a condenser lenswhich collects the exposure light beam EL emitted from the opticalintegrator, a relay lens system, and a field diaphragm which defines theillumination area on the mask M illuminated with the exposure light beamEL. A predetermined illumination area on the mask M is illuminated withthe exposure light beam EL having a uniform illuminance distribution bythe illumination optical system IL. Those usable as the exposure lightbeam EL radiated from the illumination optical system IL include, forexample, emission lines (g-ray, h-ray, i-ray) radiated, for example,from a mercury lamp, far ultraviolet light beams (DUV light beams) suchas the KrF excimer laser beam (wavelength: 248 nm), and vacuumultraviolet light beams (VUV light beams) such as the ArF excimer laserbeam (wavelength: 193 nm), the F₂ laser beam (wavelength: 157 nm), andthe like. In this embodiment, the ArF excimer laser beam is used.

In this embodiment, pure or purified water is used as the liquid LQ. Notonly the ArF excimer laser beam but also the emission line (g-ray,h-ray, i-ray) radiated, for example, from a mercury lamp and the farultraviolet light beam (DUV light beam) such as the KrF excimer laserbeam (wavelength: 248 nm) are also transmissive through pure water.

The mask stage MST is movable while holding the mask M. The mask stageMST holds the mask M by the vacuum attraction (or the electrostaticattraction). A plurality of gas bearings (air bearings) 45, which arenon-contact bearings, are provided on the lower surface of the maskstage MST. The mask stage MST is supported in a non-contact manner withrespect to the upper surface (guide surface) of a mask surface plate 4by the air bearings 45. Openings (side walls of the openings areindicated by MK1, MK2 respectively), through which the image of thepattern of the mask M is allowed to pass, are formed at central portionsof the mask stage MST and the mask surface plate 4 respectively. Themask surface plate 4 is supported by the upper stepped portion 7 of themain column 1 via an anti-vibration unit 46. That is, in thisconstruction, the mask stage MST is supported by the main column 1(upper stepped portion 7) via the anti-vibration unit 46 and the masksurface plate 4. The mask surface plate 4 and the main column 1 areisolated from each other in terms of vibration by the anti-vibrationunit 46 so that the vibration of the main column 1 is not transmitted tothe mask surface plate 4 which supports the mask stage MST.

The mask stage MST is two-dimensionally movable in a plane perpendicularto the optical axis AX of the projection optical system PL, i.e., in theXY plane, and it is finely rotatable in the θZ direction on the masksurface plate 4 in a state in which the mask M is held thereon, inaccordance with the driving operation of the mask stage-driving unitMSTD including, for example, a linear motor controlled by the controlunit CONT, and the like. The mask stage MST is movable at a designatedor predetermined scanning velocity in the X axis direction. The maskstage MST has a movement stroke in the X axis direction to such anextent that the entire surface of the mask M is capable of traversing(crossing) at least the optical axis AX of the projection optical systemPL.

A movement mirror 41, which is movable together with the mask stage MST,is fixedly secured on the mask stage MST. A laser interferometer 42 isprovided at a position opposed to (facing) the movement mirror 41. Theposition in the two-dimensional direction and the angle of rotation inthe 8Z direction (including angles of rotation in the θX and θYdirections in some cases) of the mask M on the mask stage MST aremeasured in real-time by the laser interferometer 42. The result of themeasurement of the laser interferometer 42 is outputted to the controlunit CONT. The control unit CONT drives the mask stage-driving unit MSTDbased on the result of the measurement performed by the laserinterferometer 42 to thereby control the position of the mask M held bythe mask stage MST.

The projection optical system PL projects the pattern of the mask M ontothe substrate P at a predetermined projection magnification 3 to performthe exposure. The projection optical system PL includes a plurality ofoptical elements including the optical element LS1 provided at the endportion on the side of the substrate P. The optical elements aresupported by a barrel PK. In this embodiment, the projection opticalsystem PL is a reduction system having the projection magnification βwhich is, for example, ¼, ⅕, ⅛, or the like. The projection opticalsystem PL may any one of the 1× magnification system and the magnifyingsystem. The projection optical system PL may be any one of the dioptricsystem including no catoptric element, the catoptric system including nodioptric element, and the catadioptric system including dioptric andcatoptric elements.

A flange PF is provided on the outer circumference of the barrel PKwhich holds the projection optical system PL. The projection opticalsystem PL is supported by a barrel surface plate 5 via the flange PF.The barrel surface plate 5 is supported by the lower stepped portion 8of the main column 1 via an anti-vibration unit 47. That is, in thisconstruction, the projection optical system PL is supported by the maincolumn 1 (lower stepped portion 8) via the anti-vibration unit 47 andthe barrel surface plate 5. The barrel surface plate 5 is isolated fromthe main column 1 in terms of vibration by the anti-vibration unit 47 sothat the vibration of the main column 1 is not transmitted to the barrelsurface plate 5 which supports the projection optical system PL.

The substrate stage PST is movable while supporting the substrate holderPH which holds the substrate P. The substrate holder PH holds thesubstrate P, for example, by the vacuum attraction or the like. A recess50 is provided on the substrate stage PST. The substrate holder PH forholding the substrate P is arranged in the recess 50. The upper surface51, other than the recess 50, of the substrate stage PST forms a flatsurface (flat portion) which has approximately the same height as thatof (is flush with) the surface of the substrate P held by the substrateholder PH.

A plurality of gas bearings (air bearings) 48, which are non-contactbearings, are provided on the lower surface of the substrate stage PST.The substrate stage PST is supported in a non-contact manner by the airbearings 48 with respect to the upper surface (guide surface) of asubstrate surface plate 6. The substrate surface plate 6 is supported onthe base 9 via an anti-vibration unit 49. The substrate surface plate 6is isolated from the main column 1 and the base 9 (floor surface) interms of vibration by the anti-vibration unit 49 so that the vibrationsof the base 9 (floor surface) and the main column 1 are not transmittedto the substrate surface plate 6 which supports the substrate stage PST.

The substrate stage PST is two-dimensionally movable in the XY plane,and it is finely rotatable in the θZ direction on the substrate surfaceplate 6 in a state in which the substrate P is held via the substrateholder PH, in accordance with the driving operation of the substratestage-driving unit PSTD including, for example, a linear motor which iscontrolled by the control unit CONT or the like. Further, the substratestage PST is also movable in the Z axis direction, the θX direction, andthe θY direction. Therefore, the surface of the substrate P supported bythe substrate stage PST is movable in the directions of six degrees offreedom in the X axis, Y axis, Z axis, θX, θY, and θZ directions.

A movement mirror 43, which is movable together with the substrate stagePST, is fixedly secured to a side surface of the substrate stage PST. Alaser interferometer 44 is provided at a position opposed to (facing)the movement 43. The position in the two-dimensional direction and theangle of rotation of the substrate P on the substrate stage PST aremeasured in real time by the laser interferometer 44.

The exposure apparatus EX is provided with a focus/leveling-detectingsystem 30 based on the oblique incidence system which detects thesurface position information about the surface of the substrate Psupported by the substrate stage PST, as disclosed, for example, inJapanese Patent Application Laid-open No. 8-37149. Thefocus/leveling-detecting system 30 includes a light-emitting system 31which radiates a detecting light beam La, through the liquid LQ, ontothe surface of the substrate P; and a light-receiving system 32 whichreceives a reflected light beam of the detecting light beam La radiatedonto the surface of the substrate P. The focus/leveling-detecting system30 detects a surface position information about the surface of thesubstrate P (position information in the Z axis direction, andinformation about the inclination in the θX and θY directions of thesubstrate P). A system, in which the detecting light beam La is radiatedonto the surface of the substrate P not through the liquid LQ, may beadopted for the focus/leveling-detecting system. Alternatively, asystem, which uses an electrostatic capacity type sensor, may be adoptedas the focus/leveling-detecting system.

The result of the measurement performed by the laser interferometer 44is outputted to the control unit CONT. The result of the detectionperformed by the focus/leveling-detecting system 30 is also outputted tothe control unit CONT. The control unit CONT drives the substratestage-driving unit PSTD based on the detection result of thefocus/leveling-detecting system 30 to adjust and match the surface ofthe substrate P with respect to the image plane of the projectionoptical system PL in the auto-focus manner and the auto-leveling mannerby controlling the focus position (Z position) and the angle ofinclination (θX, θY) of the substrate P. Further, the control unit CONTcontrols the position of the substrate P in the X axis direction, the Yaxis direction, and the θZ direction based on the measurement result ofthe laser interferometer 44.

The liquid supply mechanism 10 of the liquid immersion mechanism 100supplies the liquid LQ to the side of the image plane of the projectionoptical system PL. The liquid supply mechanism 10 includes a liquidsupply section 11 which is capable of feeding the liquid LQ, and asupply tube 13 which has one end connected to the liquid supply section11. The other end of the supply tube 13 is connected to the first nozzlemember 71. The liquid supply section 11 includes, for example, a tankfor accommodating the liquid LQ, a pressurizing pump, atemperature-adjusting unit for adjusting the temperature of the liquidLQ to be supplied, and a filter unit for removing any foreign matter(including any bubble) from the liquid LQ, and the like. The operationof the liquid supply section 11 is controlled by the control unit CONT.

It is not necessarily indispensable that the liquid supply mechanism 10of the exposure apparatus EX is provided with all of the tank, thepressurizing pump, the temperature-adjusting unit, the filter unit andthe like. At least a part or parts of these components may be replacedwith the equipment of a factory or the like in which the exposureapparatus EX is installed.

The liquid recovery mechanism 20 of the liquid immersion mechanism 100recovers the liquid LQ on the side of the image plane of the projectionoptical system PL. The liquid recovery mechanism 20 includes a liquidrecovery section 21 which is capable of recovering the liquid LQ, and arecovery tube 23 which has one end connected to the liquid recoverysection 21. The other end of the recovery tube 23 is connected to thesecond nozzle member 72. The liquid recovery section 21 includes, forexample, a vacuum system (suction unit) such as a vacuum pump, agas/liquid separator for separating the gas and the recovered liquid LQfrom each other, and a tank for accommodating the recovered liquid LQ.The operation of the liquid recovery section 21 is controlled by thecontrol unit CONT.

It is not necessarily indispensable that the liquid recovery mechanism20 of the exposure apparatus EX is provided with all of the vacuumsystem, the gas/liquid separator, the tank and the like. At least a partor parts of these components may be replaced with the equipment of afactory or the like in which the exposure apparatus EX is installed.

FIG. 2 shows a side sectional view illustrating those disposed in thevicinity of the end portion of the projection optical system PL on theside of the image plane. In FIG. 2, three optical elements LS1 to LS3are shown as the optical elements constructing the projection opticalsystem PL. However, actually, the projection optical system PL isconstructed by a plurality of, i.e., three or more optical elements. Theoptical element LS1, which is provided at the end portion of theprojection optical system PL on the side of the image plane and which isincluded in the plurality of optical elements constructing theprojection optical system PL, is an optical element having no refractivepower with no lens function, and is a plane-parallel. That is, the lowersurface T1 and the upper surface T2 of the optical element LS1 aresubstantially flat surfaces respectively, and are substantially parallelto each other. As for the optical element LS1, it is also allowable touse an optical element which has any refractive power and which has itsupper surface T2 formed to expand toward a plane of the object (objectplane) of the projection optical system PL (toward the mask M).

The outer diameter of the upper surface T2 of the optical element LS1 isformed to be larger than the outer diameter of the lower surface T1. Aflange portion F1 is formed in the vicinity of the upper surface T2 ofthe optical element LS1. The barrel PK is provided to surround the outerside surface C1 of the optical element LS1. A support portion PKF, whichsupports the flange portion F1 of the optical element LS1, is providedinside the barrel PK. The lower surface TK of the barrel PK issubstantially flush with the lower surface T1 of the optical element LS1supported (held) by the barrel PK.

A predetermined gap G1 is provided between an inner side surface PKS ofthe barrel PK and an outer side surface C1 of the optical element LS1. Aseal member 60 is provided in the gap G1. The seal member 60 suppressesthe inflow of the liquid LQ of the liquid immersion area AR2 into thegap G1, and the seal member 60 prevents the gas existing in the gap G1from entering into and mixing with the liquid LQ of the liquid immersionarea AR2. If the liquid LQ makes inflow into the gap then there is sucha possibility that any force may be exerted on the outer side surface C1of the optical element LS1, and there is such a possibility that theoptical element LS1 is vibrated and/or deformed by the force. Further,there is such a possibility that the gas existing in the gap G1 inflowsinto and mixes with the liquid LQ of the liquid immersion area AR2, andthat the mixed gas (bubble) inflows into the optical path for theexposure light beam EL. In order to lower the possibilities as describedabove, the seal member 60 is provided in the gap G1 between the innerside surface PKS of the barrel PK and the outer side surface C1 of theoptical element LS1.

In this embodiment, the seal member 60 is a V-ring having a V-shapedcross section. A body portion of the V-ring is held by the inner sidesurface PKS of the barrel PK. An end portion of the V-ring, which has aflexibility, makes contact with the outer side surface C1 of the opticalelement LS1. Any one of various seal members including, for example,O-rings, C-rings, and the like is usable as the seal member 60 providedthat it is possible to suppress the inflow of the liquid LQ of theliquid immersion area AR2 into the gap G1 and the entrance and mixing ofthe gas existing in the gap G into the liquid immersion area AR2, andthat the stress exerted on the optical element LS1 is small.

The nozzle member 70 is formed to have an annular shape to surround theprojection optical system PL in the vicinity of the end portion of theprojection optical system PL on the side of the image plane. The nozzlemember 70 includes the first nozzle member 71 which is arranged tosurround the optical element LS1 of the projection optical system PL,and the second nozzle member 72 which is arranged to surround the outerside of the first nozzle member 71. The first nozzle member 71 issupported by the barrel PK which holds the optical elements constructingthe projection optical system PL. The first nozzle member 71 is anannular member connected to the outer side surface PKC of the barrel PK.There is no gap between the outer side surface PKC of the barrel PK andan inner side surface 71S of the first nozzle member 71. That is, thebarrel PK and the first nozzle member 71 are joined to each otherwithout any gap, and are constructed substantially as an integratedbody. Therefore, the liquid LQ of the liquid immersion area AR2 makes noinflow into any space between the outer side surface PKC of the barrelPK and the inner side surface 71S of the first nozzle member 71. It isalso possible to prevent the gas from entering into and mixing with theliquid LQ of the liquid immersion area AR2, which would be otherwisecaused by the presence of any gap between the outer side surface PKC ofthe barrel PK and the inner side surface 71S of the first nozzle member71.

The second nozzle member 72 is supported by the lower stepped portion 8of the main column 1 via a support mechanism 81. The support mechanism81 is provided with a connecting member 82, and a driving mechanism 83which is provided between one end (upper end) of the connecting member82 and the lower stepped portion 8. The other end (lower end) of theconnecting member 82 is connected (fixed) to the upper surface of thesecond nozzle member 72. The support mechanism 81 is capable of movingthe second nozzle member 72 with respect to the lower stepped portion 8of the main column 1 by driving the driving mechanism 83. Although notshown in the drawing, the support mechanism 81 is also provided with apassive anti-vibration mechanism which performs passivevibration-prevention so that the vibration generated in the secondnozzle member 72 is not transmitted to the lower stepped portion 8 ofthe main column 1. The passive anti-vibration mechanism is providedbetween the connecting member 82 and the lower stepped portion 8 of themain column 1, and is constructed of, for example, an air spring (forexample, an air cylinder, an air bellows, or the like). The passiveanti-vibration mechanism prevents the vibration of the second nozzlemember 72 from being transmitted to the main column 1 by the elasticfunction of the gas (air). The passive anti-vibration mechanism mayinclude a coil spring. The second nozzle member 72 is also an annularmember similarly to the first nozzle member 71. The second nozzle member72 is provided to surround the outer side surface 71C of the firstnozzle member 71. A predetermined gap G2 is provided between an outerside surface 71C of the first nozzle member 71 connected to the barrelPK and an inner side surface 72S of the second nozzle member 72supported by the support mechanism 81. Therefore, the first nozzlemember 71 and the second nozzle member 72 are not directly connected toeach other, and are isolated from each other in terms of vibration.

The first and second nozzle members 71, 72 have the lower surfaces 71A,72A which are opposite to (facing) the surface of the substrate P (uppersurface of the substrate stage PST) respectively. The lower surface 71Aof the first nozzle member 71 connected to the barrel PK issubstantially flush with the lower surface 72A of the second nozzlemember 72 supported by the support mechanism 8i The lower surfaces 71A,72A of the first and second nozzle members 71, 72 are substantiallyflush with the lower surface T1 of the optical element LS1. Therefore,in this embodiment, the lower surface 71A of the first nozzle member 71,the lower surface 72A of the second nozzle member 72, the lower surfaceTK of the barrel PK, and the lower surface T1 of the optical element LS1are substantially flush with one another.

The supply ports 12 which supplies the liquid LQ onto the substrate Pare provided on the lower surface 71A of the first nozzle member 71. Therecovery port 22 which recovers the liquid LQ on the substrate P isprovided on the lower surface 72A of the second nozzle ember 72. Thesupply port 12 is provided as a plurality of supply ports 12 on thelower surface 71A of the first nozzle member 71 to surround the opticalaxis AX of the projection optical system PL (see FIG. 3). The recoveryport 22 is provided on the lower surface 72A of the second nozzle member72 such that the recovery port 22 is further away outwardly, from theoptical axis AX of the projection optical system PL, than the supplyports 12 provided on the lower surface 71A of the first nozzle member71. The recovery port 22 is formed to have, for example, an annularslit-shaped form on the lower surface 72A of the second nozzle member 72to surround the optical axis AX of the projection optical system PL (seeFIG. 3). In this embodiment, a porous member (mesh member) 22P isarranged in the recovery port 22.

An internal flow passage 14, which connects each of the plurality ofsupply ports 12 with the supply tube 13, is provided in the first nozzlemember 71. The internal flow passage 14, which is formed in the firstnozzle member 71, is branched at intermediate positions thereof so thatthe internal flow passage 14 can be connected to each of the supplyports An internal flow passage 24, which connects the annular recoveryport 22 and the recovery tube 23, is provided in the second nozzlemember 72 (see FIG. 2). The internal flow passage 24 is formed to havean annular form to be adapted to the annular recovery port 22. Theinternal flow passage 24 includes an annular flow passage which isconnected to the recovery port 22, and a manifold flow passage whichconnects a past of the annular flow passage and the recovery tube 23.When the liquid LQ is to be supplied onto the substrate P, the controlunit CONT feeds the liquid LQ from the liquid supply section 11 tosupply the LQ onto the substrate P, from the supply ports 12 provided atpositions over or above the substrate P, via the supply tube 13 and theinternal flow passage 14 of the first nozzle member 71. When the liquidLQ on the substrate P is to be recovered, the control unit CONT drivesthe liquid recovery section 12. When the liquid recovery section 21 isdriven, then the liquid LQ on the substrate P is allowed to flow intothe internal flow passage 24 of the second nozzle member 72 via therecovery port 22 provided at positions over or above the substrate P,and the liquid LQ is recovered by the liquid recovery section 21 via therecovery tube 23.

When the liquid immersion area AR2 of the liquid LQ is to be formed, thecontrol unit CONT uses the liquid supply mechanism 10 and the liquidrecovery mechanism 20 of the liquid immersion mechanism 100 to supplyand recover the liquid LQ with respect to the substrate P. The liquid LQforms the liquid immersion area AR2 with which the space between thesurface of the substrate P and the lower surface 70A (71A, 72A) of thenozzle member 70 and the lower surface T1 of the optical element LS1 ofthe projection optical system PL is filled.

FIG. 3 shows the nozzle member 70 as viewed from below. As shown in FIG.3, the support mechanism 81 supporting the second nozzle member 72includes three connecting members 82, and three driving mechanisms 83which are provided corresponding to the connecting members 82respectively. The respective connecting members 82 are arranged atapproximately equal intervals (120° intervals) in the circumferentialdirection (θZ direction) of the second nozzle member 72. Lower ends ofthe connecting members 82 are fixed in the upper surface of the secondnozzle member 72 at three predetermined positions, respectively. Each ofthe driving mechanisms 83 is provided between the upper end of one ofthe three connecting members 82 and the lower stepped portion 8 of themain column 1. That is, in this embodiment, the driving mechanisms 83are also arranged at approximately equal intervals (120° intervals). Thepassive anti-vibration mechanism is also provided as three passiveanti-vibration mechanisms corresponding to the connecting members 82respectively. The driving mechanism 83 is constructed of, for example, alinear motor, a voice coil motor or the like driven, for example, by theLorentz's force. The voice coil motor or the like, which is driven bythe Lorentz's force, has a coil unit and a magnet unit. The coil unitand the magnet unit are driven in a non-contact state. Therefore, whenthe driving mechanism 83 is constructed of a driving mechanism such asthe voice coil motor or the like driven by the Lorentz's force, then itis possible to suppress the generation of the vibration.

The operation of the driving mechanism 83 is controlled by the controlunit CONT. The control unit CONT uses the three driving mechanisms 83 sothat the second nozzle member 72, which is connected to the connectingmembers 82, is driven (displaced or moved) with respect to the lowerstepped portion 8 of the main column 1. That is, the control unit CONTadjusts a driving amount by which each of the plurality of drivingmechanisms 83 is moved, to thereby adjust at least any one of theposition and the posture (inclination) of the second nozzle member 72connected to the connecting members 82. In this embodiment, three piecesof the driving mechanisms 83 are provided. The control unit CONT adjuststhe respective driving amounts of the plurality of driving mechanisms83, thereby remaking it possible to drive the second nozzle member 72 inrelation to the directions of three degrees of freedom of the θXdirection, the θY direction, and the Z axis direction.

The control unit CONT adjusts at least one of the position and theposture of the second nozzle member 72 based on the detection result ofthe focus/leveling-detecting system 30 which detects the surfaceposition information of the surface of the substrate P.

In this embodiment, the nozzle-adjusting mechanism 80 has the threedriving mechanisms 83. However, the number and the position(s) of thedriving mechanism or mechanisms 83 can be arbitrarily set. For example,six pieces of the driving mechanisms 83 may be provided, and the secondnozzle member 72 may be driven (displaced or moved) in relation to thedirections of six degrees of freedom (directions of X axis, Y axis, Zaxis, θX, θY, and θZ). As described above, the number and theposition(s) of the driving mechanism or mechanisms 83 may beappropriately set depending on the number of degrees of freedom in whichthe second nozzle member 72 is intended to be driven.

Next, an explanation will be made about a method which exposes thesubstrate P by projecting an image of a pattern of the mask M onto thesubstrate P by using the exposure apparatus EX constructed as describedabove.

After the substrate P is loaded on a substrate holder PH, the controlunit CONT supplies and recovers the liquid LQ with respect to thesurface of the substrate P by using the liquid supply mechanism 10 andthe liquid recovery mechanism 20 of the liquid immersion mechanism 100.A space between the surface of the substrate P and the lower surface 70Aof the nozzle member 70 and the lower surface T1 of the projectionoptical system PL is filled with the liquid LQ in accordance with theliquid supply operation and the liquid recovery operation performed bythe liquid immersion mechanism 100. The liquid immersion area AR2 of theliquid LQ is locally formed on the substrate P.

The exposure apparatus EX of the embodiment of the present inventionprojects the image of the pattern of the mask M onto the substrate Pwhile moving the mask M and the substrate P in the X axis direction(scanning direction). The substrate P is subjected to the scanningexposure while being moved in the X axis direction. During the scanningexposure, a part of the image of the pattern of the mask M is projectedonto a portion included in the projection area AR1 via the projectionoptical system PL and the liquid LQ of the liquid immersion area AR2;and the mask M is moved at the velocity V in the −X direction (or in the+X direction), in synchronization with which the substrate P is moved atthe velocity β·V (β represents the projection magnification) the +Xdirection (or in the −X direction) with respect to the projection areaAR1. A plurality of shot areas are defined on the substrate P. After theexposure is completed for one shot area, the next shot area is moved toa scanning start position in accordance with the stepping movement ofthe substrate P. The scanning exposure process is successively performedthereafter for the respective shot areas while moving the substrate P inthe step-and-scan manner.

During the scanning exposure for each of the shot areas, the surfaceposition information of the substrate P (position information andinclination information in the Z direction) is detected by thefocus/leveling-detecting system 30. The control unit CONT adjusts thepositional relationship between the surface of the substrate P and theimage plane of the projection optical system PL based on the detectionresult of the focus/leveling-detecting system 30, during the scanningexposure for the substrate P. Specifically, the control unit CONT drivesthe substrate stage PST via the substrate stage-driving mechanism PSTDso that the surface of the substrate P is matched with the image planeformed through the liquid LQ and the projection optical system PL toadjust the surface position (Z position, θX, θY) of the substrate Psupported by the substrate stage PST. The adjusting mechanism foradjusting the positional relationship between the substrate P and theimage plane of the projection optical system PL is not limited to onlythe substrate stage PST (substrate stage-driving mechanism PSTD)adjusting the surface position of the surface of the substrate P. Forexample, it is also allowable to adopt an imagingcharacteristic-adjusting unit provided for a projection optical systemPL as disclosed in Japanese Patent Application Laid-open No. 60-78454.The imaging characteristic-adjusting unit is capable of adjusting theposition of image plane of the projection optical system PL by driving aspecified optical element among a plurality of optical elementsconstructing the projection optical system PL and/or by adjusting thepressure in the barrel PK. Therefore, the: control unit CONT can adjustthe positional relationship between the surface of the substrate P andthe image plane of the projection optical system PL to match the imageplane of the projection optical system PL and the surface of thesubstrate P by driving the imaging characteristic-adjusting unit basedon the detection result of the focus/leveling-detecting system 30. Thesurface of the substrate P and the image plane of the projection opticalsystem PL may be matched with each other by using, in combination, thedriving operation of the substrate stage PST and the driving operationof the imaging characteristic-adjusting unit.

The control unit CONT adjusts at least one of the position and theposture (Z position, θX, θY) of the second nozzle member 72 depending onthe surface position of the substrate P (Z position, θX, θY).Specifically, the control unit CONT adjusts at least one of the positionand the posture of the second nozzle member 72 based on the surfaceposition information of the surface of the substrate P, i.e., thedetection result of the focus/leveling-detecting system 30 to performthe adjustment so that at least one of the relative distance and therelative inclination between the surface of the substrate P and theannular lower surface 72A of the second nozzle member 72 is maintainedin a desired state.

When the relative distance or the relative inclination between thesurface of the substrate P and the lower surface 72A of the secondnozzle member 72 is varied, then the liquid LQ cannot be retainedsatisfactorily, and there is such a possibility that the liquid LQ ofthe liquid immersion area AR2 may outflow and/or any bubble may enterinto and mix with the liquid immersion area AR2. The control unit CONTdrives the driving mechanisms 83 to adjust at least one of the positionand the posture of the second nozzle member 72 so that the relativedistance and the relative inclination between the surface of thesubstrate P and the lower surface 72A of the second nozzle member 72 ismaintained to be substantially constant during the scanning exposure forthe substrate P. Accordingly, the liquid LQ can be satisfactorilyretained between the substrate P and the lower surface 72A of the secondnozzle member 72, thereby making it possible to prevent the liquid LQ ofthe liquid immersion area AR2 from outflowing and the bubble fromentering into and mixing with the liquid immersion area AR2.

In this embodiment, the control unit CONT adjusts at least one of theposition and the posture of the second nozzle member 72 so that adistance between the surface of the substrate P and the lower surface72A of the second nozzle member 72 is L1 (approximately 1 mm), and thatthe surface of the substrate P and the lower surface 72A aresubstantially parallel to each other. That is, as schematically shown inFIG. 4(A), in order to match the image plane of the projection opticalsystem PL with the surface of the substrate P during the scanningexposure for the substrate P, when the position of the surface of thesubstrate P in the Z axis direction is varied, the control unit CONTchanges the position of the second nozzle member 72 in the Z axisdirection by the driving mechanisms 83 so that the relative distancebetween the surface of the substrate P and the lower surface 72A of thesecond nozzle member 72 is maintained to be the predetermined distanceL1. On the other hand, when the surface of the substrate P is inclinedin the θX direction or in the θY direction, as shown in FIGS. 4(B) and4(C), then the control unit CONT changes the position of the secondnozzle member 72 in the θX direction or the (Y direction (inclination ofthe second nozzle member 72) by the driving mechanisms 83 whilemaintaining the relative distance between the surface of the substrate Pand the lower surface 72A of the second nozzle member 72 to be thepredetermined distance L1, and maintaining the relative inclinationbetween the surface of the substrate P and the lower surface 72A of thesecond nozzle member 72 to be substantially parallel. That is, thecontrol unit CONT drives the driving mechanisms 83 depending on thechange of the surface position of the substrate P to move the lowersurface 72A of the second nozzle member 72 in the normal line directionand the direction of inclination of the surface of the substrate P. Theinitial position and the initial inclination of the second nozzle member72 are previously set to have predetermined values respectively inrelation to a reference surface position (designed value) of thesubstrate P. The driving mechanisms 83 displaces or moves the secondnozzle member 72 based on the preset initial values so that the relativedistance between the surface of the substrate P and the lower surface72A of the second nozzle member 72 is maintained to be the predetermineddistance LI, and that the parallelism between the surface of thesubstrate P and the lower surface 72A of the second nozzle member 72 ismaintained.

As described above, the control unit CONT adjusts at least one of theposition and the posture of the second nozzle member 72 to follow thechange in the surface position of the substrate P during the scanningexposure for the substrate P. Accordingly, the relative distance and therelative inclination between the surface of the substrate P and thelower surface 72A of the second nozzle member 72 can be maintained to beconstant.

In this embodiment, the lower surface 70A (71A, 72A) of the nozzlemember 70, the lower surface TK of the barrel PK, and the lower surfaceT1 of the projection optical system PL (optical element LS1) aresubstantially flush with one another. Therefore, the liquid immersionarea AR2 is formed satisfactorily between the substrate P and the lowersurface 70A of the nozzle member 70 and the lower surface T1 of theprojection optical system PL. However, it is not necessarilyindispensable that the lower surface 71A, the lower surface 72A, thelower surface TK, and the lower surface T1 are flush with one another.The positions of the respective lower surfaces in the Z direction can beset such that the liquid immersion area AR2 can be maintainedsatisfactorily. When the lower surface 70A of the nozzle member 70, thelower surface T1 of the projection optical system PL, and the lowersurface TK of the barrel PK, which are liquid contact surfaces whichmake contact with the liquid LQ of the liquid immersion area AR2, aremade liquid-attractive with respect to the liquid LQ, then the liquidimmersion area AR2 can be maintained in the desired state moresatisfactorily. The upper surface 51, which is substantially flush withthe surface of the substrate P, is provided around the substrate P in astate that any difference in height is hardly brought about outside theedge portion of the substrate P. Therefore, for example, when the edgearea of the surface of the substrate P is subjected to the liquidimmersion exposure, the liquid immersion area AR2 can be formedsatisfactorily by retaining the liquid LQ on the side of the image planeof the projection optical system PL The gap of about 0.1 to 1 mm isprovided between the edge portion of the substrate P and the flatsurface (upper surface) 51 provided around the substrate P. However, theliquid LQ scarcely inflows into the gap owing to the surface tension ofthe liquid LQ, when the upper surface 51 is liquid-repellent withrespect to the liquid LQ, it is possible to suppress the outflow of theliquid LQ to the outside of the substrate stage PST, even when a part ofthe liquid immersion area AR2 is arranged on the upper surface 51 (i.e.,when the liquid LQ forming the liquid immersion area AR2 is retained ina space between the substrate P and the upper surface 51 of thesubstrate stage PST, and the lower surfaces 70A, T1 of the nozzle memberand projection optical system PL). In this case also, it is possible toprevent the liquid LQ from remaining on the upper surface 51.

In this embodiment, the liquid recovery mechanism 20 recovers the liquidLQ via the recovery port 22 by driving the vacuum system provided forthe liquid recovery section 21. In this case, there is such apossibility that the liquid LQ is recovered via the recovery port 22together with surrounding gas. Therefore, the vibration tends to begenerated in the second nozzle member 72 having the recovery port 22than in the first nozzle member 71. However, the gap G2 is providedbetween the first nozzle member 71 and the second nozzle member 72 (theyare not mechanically connected to each other). Therefore, the vibrationgenerated in the second nozzle member 72 is not directly transmitted tothe first nozzle member 71 and the barrel PK (projection optical systemPL) connected to the first nozzle member 71.

Further, the second nozzle member 72 is supported by the main column 1(lower stepped portion 8) by the support mechanism 81 including thepassive anti-vibration mechanisms. Therefore, the vibration generated inthe second nozzle member 72 is also suppressed from being transmitted tothe main column 1.

The main column 1, which supports the second nozzle member 72 via thesupport mechanism 81, is isolated in terms of vibration by theanti-vibration unit 47 from the barrel surface plate 5 which supportsthe barrel PK of the projection optical system PL via the flange PF.Therefore, the vibration generated in the second nozzle member 72 isprevented from being transmitted to the projection optical system PLowing to the respective functions of the anti-vibration unit 47 and thepassive anti-vibration mechanisms of the support mechanism 81. The maincolumn 1 is isolated in terms of vibration by the anti-vibration unit 49from the substrate surface plate 6 which supports the substrate stagePST. Therefore, the vibration generated in the second nozzle member 72is also prevented from being transmitted to the substrate stage PST viathe main column 1 and the base 9. The main column 1 is isolated in termsof vibration by the anti-vibration unit 46 from the mask surface plate 4which supports the mask stage MST. Therefore, the vibration generated inthe second nozzle member 72 is also prevented from being transmitted tothe mask stage MST via the main column 1.

On the other hand, the first nozzle member 71 has no recovery port. Thefirst nozzle member 71 has only the supply ports 12 for supplying theliquid LQ. When the liquid LQ is supplied via the supply ports 12, thereis hardly a possibility that any vibration is generated to such anextent that the exposure accuracy is affected thereby, Therefore, evenwhen the first nozzle member 71 is connected to the barrel PK of theprojection optical system PL, it is unlikely that any vibration isgenerated in the projection optical system PL (barrel PK) resulting fromthe first nozzle member 71 to such an extent that the exposure accuracyis affected thereby. The exposure accuracy is therefore maintained.

The gap G2 has a distance to such an extent that the second nozzlemember 72 does not abut against (interfere with) the first nozzle member71 even when the second nozzle member 72 is driven by the drivingmechanisms 83. Therefore, the driving operation of the second nozzlemember 72 by the driving mechanisms 83 is not inhibited. In order not toinhibit the driving operation of the second nozzle member 72, it ispreferable that at least a part of the recovery tube 23 connected to thesecond nozzle member 72 is constructed of, for example, a flexible tubewhich is expandable and contractible.

As the substrate P is moved to perform the scanning exposure, there issuch a possibility that the liquid LQ of the liquid immersion area AR2between the substrate P and the lower surface T1 of the projectionoptical system PL and the lower surface 70A of the nozzle member 70, ismoved as if the liquid LQ is pulled by the moving substrate P. Forexample, as shown in FIG. 5, there is such a possibility that a part ofthe liquid LQ of the liquid immersion area AR2 is moved in the +Xdirection in accordance with the movement of the substrate P in the +Xdirection. However, the gap G2 is formed between the first nozzle member71 and the second nozzle member 72, and the upper end of the gap G2 isopen to the atmospheric air. Therefore, the liquid LQ can enter and exitthe gap G2. Therefore, even when the size (diameter) of the nozzlemember 70 is small, it is possible to suppress the outflow of the liquidLQ to the outside of the recovery port 22.

A possibility is assumed such that the gas existing in the gap G2 entersinto and mixes with the liquid LQ of the liquid immersion area AR2.However, the gap G2 is provided outside the supply ports 12 with respectto the optical path for the exposure light beam EL (projection areaAR1). A part of the liquid LQ supplied from the supply ports 12 forms aflow of the liquid directed to the outside of the supply ports 12 (seearrows y1 shown in FIG. 5). Therefore, even when any bubble enters fromthe gap G2 into and mixes with the liquid LQ of the liquid immersionarea AR2, the mixed bubble is moved by the flow of the part of theliquid LQ supplied from the supply ports 12 so that the bubble movesaway from the optical path for the exposure light beam EL. Therefore, itis possible to avoid the occurrence of the deterioration of the accuracyin the transfer of the pattern of the mask M onto the substrate P, whichwould be otherwise caused by the inflow of the mixed gas (bubble) intothe optical path for the exposure light beam EL.

As explained above, when the liquid immersion area AR2 is formed byretaining the liquid LQ between the lower surface 70A of the nozzlemember 70 and the surface of the substrate P, at least one of theposition and the posture of the nozzle member 70 is adjusted dependingon the surface position of the substrate P. Accordingly, the positionalrelationship between the nozzle member 70 and the substrate P can bemaintained in the desired state. Therefore, even when the surfaceposition of the substrate P is changed during the scanning exposure, theliquid LQ is satisfactorily retained between the nozzle member 70 andthe substrate P, and the liquid LQ is consequently retained between theprojection optical system PL and the substrate P satisfactorily as well.Therefore, it is possible to suppress the outflow of the liquid LQ tothe outside of the substrate P and to prevent the bubble from enteringinto and mixing with the liquid LQ. The exposure apparatus EX can thusperform the exposure process accurately.

In particular, in this embodiment, among first and second nozzle members71, 72, at least one of the position and the posture of the secondnozzle member 72 having the recovery port 22 is adjusted. Therefore, theliquid LQ can be recovered satisfactorily via the recovery port 22 ofthe second nozzle member 72 while following the change of the surfaceposition of the substrate P. Therefore, the liquid recovery mechanism 20can satisfactorily recover the liquid LQ even during the scanningexposure for the substrate P. The first nozzle member 71 may besupported by the lower stepped portion of the main column 1 via asupport mechanism having a driving mechanism in the same manner as thesecond nozzle member 72, instead of connecting the first nozzle member71 to the barrel PK, so that at least one of the position and theposture (position and inclination in the Z direction) of the firstnozzle member 71 is adjusted depending on the surface position of thesubstrate P independently from the second nozzle member 72.

Second Embodiment

Next, a second embodiment of the present invention will be explainedwith reference to FIG. 6. In the following description, the constitutivecomponents, which are the same as or equivalent to those of theembodiment described above, are designated by the same referencenumerals, any explanation of which will be simplified or omitted.

The feature of the second embodiment is that the nozzle member 70 isconstructed of a single member, and the supply port 12 for supplying theliquid LQ and the recovery port 22 for recovering the liquid LQ areprovided on the lower surface 70A of the nozzle member 70. Withreference to FIG. 6, the nozzle member 70 is an annular member formed tosurround the projection optical system PL. A predetermined gap G3 isprovided between the outer side surface PKC of the barrel PK of theprojection optical system PL and the inner side surface 70S of thenozzle member 70. The gap G3 prevents the vibration from being directlytransmitted to the projection optical system PL, even when the vibrationis generated in the nozzle member 70 due to the supply and the recoveryof the liquid LQ. The nozzle member 70 is supported by the lower steppedportion 8 of the main column 1 via the support mechanism 81 having thedriving mechanisms 83. When the substrate P is to be subjected to thescanning exposure, the control unit CONT adjusts at least one of theposition and the posture of the nozzle member 70 based on the detectionresult of the focus/leveling-detecting system 30. Even when the nozzlemember 70 is constructed of the single member as described above, it ispossible to avoid the outflow of the liquid LQ and to prevent the bubblefrom entering into and mixing with the liquid immersion area AR2 byadjusting at least any one of the position and the posture of the nozzlemember 70 depending on the surface position of the substrate P.

Third Embodiment

Next, a third embodiment of the present invention will be explained withreference to FIG. 7. A difference between the third embodiment and thefirst embodiment, i.e., the feature of the third embodiment is that thesupply port 12 for supplying the liquid LQ is provided on the lowersurface TK of the barrel PK, and the internal flow passage 14, whichconnects the supply port 12 and the supply tube 13, is provided in thebarrel PK. That is, in this embodiment, the first nozzle member forsupplying the liquid LQ is included in the barrel PK which holds theoptical element LS1 constructing the projection optical system PL. Thesecond nozzle member 72 is provided to surround the barrel PK having thesupply port 12. The second nozzle member 72 has the recovery port 22 onthe lower surface 72A thereof. The second nozzle member 72 is supportedby the lower stepped portion 8 of the main column 1 via the supportmechanism 81. The second nozzle member 72 is an annular member formed tosurround the projection optical system PL. A predetermined gap G4 isdefined between the outer side surface PKC of the barrel PK of theprojection optical system PL and the inner side surface 72S of thesecond nozzle member 72. Even when any vibration is generated in thesecond nozzle member 72 due to the recovery of the liquid LQ via therecovery port 22, the gap G4 prevents the vibration from being directlytransmitted to the projection optical system PL. On the other hand, asdescribed above, the vibration is small when the liquid LQ is suppliedonto the substrate P via the supply port 12. Therefore, even when thesupply port 12 is formed in the barrel PK, any vibration, having such anextent that the exposure accuracy is affected thereby, is hardlygenerated in the barrel PK due to the supply of the liquid LQ. When thesupply port 12 is provided on the barrel PK, it is possible to decreasethe size of the liquid immersion area AR2. As the liquid immersion areaAR2 is made to be small, it is possible to shorten the movement strokeof the substrate stage PST. Consequently, it is possible to reduce thesize of the exposure apparatus EX as a whole.

Fourth Embodiment

Next, a fourth embodiment of the present invention will be explainedwith reference to FIG. 8. The fourth embodiment is different from thefirst embodiment in that, i.e., the feature of the fourth embodiment isthat an exposure apparatus EX of the fourth embodiment is provided witha detector 110 which detects the relative positional relationshipbetween the nozzle member 70 (second nozzle member 72) and the substratestage PST. The control unit CONT adjusts at least one of the positionand the posture of the second nozzle member 72 based on the detectionresult of the detector 110.

The detector 110 includes an X interferometer 111 which measures apositional relationship between the substrate stage PST and the secondnozzle member 72 in relation to the X axis direction, a Y interferometer112 which measures a positional relationship between the substrate stagePST and the second nozzle member 72 in relation to the Y axis direction,and a Z interferometer 113 which measures a positional relationshipbetween the substrate stage PST and the second nozzle member 72 inrelation to the Z axis direction. The interferometers 111 to 113 areprovided at predetermined positions respectively, of the substrate stagePST, at which the exposure process is not disturbed. In FIG. 8, theinterferometers 111 to 113 are provided on side surfaces of thesubstrate stage PST respectively.

The detector 110 is provided with a plurality of (two) pieces of Xinterferometer 111 (111A, 111B). Specifically, the detector 110 isprovided with two pieces of X interferometers 111A, 111E which areprovided on a side surface of the substrate stage PST to be aligned inthe Y axis direction. Reflecting surfaces 114 (114A, 114B), whichcorrespond to the X interferometers 111A, 111B respectively, areprovided on a side surface of the second nozzle member 72. Measuringbeams of the X interferometers 111 are radiated onto the reflectingsurfaces 114 via reflecting mirrors. The control unit CONT can determinethe position of the second nozzle member 72 in relation to the X axisdirection with respect to the substrate stage PST based on themeasurement result of at least any one of the X interferometers 111A,111B. In addition, the control unit CONT can determine the position ofthe second nozzle member 72 in the θZ direction with respect to thesubstrate stage PST based on the respective measurement results of theplurality of X interferometers 111A, 111B.

The detector 110 is provided with the single Y interferometer 118.Specifically, the detector 110 is provided with the Y interferometer 118which is provided on a side surface of the substrate stage PST. Areflecting surface (not shown), which corresponds to the Yinterferometer, is provided on a side surface of the second nozzlemember 72. The control unit CONT can determine the position of thesecond nozzle member 72 in relation to the Y axis direction with respectto the substrate stage PST based on the measurement result of the Yinterferometer.

The detector 110 is provided with a plurality of (three) pieces of Zinterferometer 111. Specifically, the detector 110 is provided with Zinterferometers 113A, 113B which are provided on side surfaces of thesubstrate stage PST to be aligned in the X axis direction, and a Zinterferometer 113C (not shown in FIG. 8) which is provided at theposition aligned in relation to the Y axis direction with respect to theZ interferometer 113B. Reflecting surfaces 116 (116A, 116B, 116C), whichcorrespond to the Z interferometers 113A, 113B, 113C respectively, areprovided on side surfaces of the second nozzle member 72. Measuringbeams of the Z interferometers 113 are radiated onto the reflectingsurfaces 116 via reflecting mirrors. The control unit CONT can determinethe position of the second nozzle member 72 in relation to the Z axisdirection with respect to the substrate stage PST based on themeasurement result of at least any one of the Z interferometers 113A,113B, 113C. In addition, the control unit CONT can determine thepositions of the second nozzle member 72 in the θX direction and the θYdirection with respect to the substrate stage PST, i.e., the inclinationof the second nozzle member 72 with respect to the substrate stage PST,based on the measurement results of at least any two of the plurality ofZ interferometers 113A, 113B, 113C.

As described above, the control unit CONT can determine the position ofthe second nozzle member 72 with respect to the substrate stage PST inrelation to the directions of six degrees of freedom (X axis, Y axis, Zaxis, θX, θY, and θZ directions) based on the measurement results of theplurality of interferometers 111 to 113.

The numbers and the arrangements of the X interferometer(s), the Yinterferometer(s), and the Z interferometer(s) can be arbitrarily set.For example, one piece of the X interferometer may be provided, and twopieces of the Y interferometers may be provided. In principle, it isenough that the construction is made such that the position of thesecond nozzle member 76 in relation to the directions of six degrees offreedom (at least Z position, θX, θY) can be measured by using aplurality of interferometers. As for the detector 110, there is nolimitation to the interferometer. It is also possible to use anyposition-measuring unit having any other construction including, forexample, a capacitance sensor, an encoder or the like.

Each of the interferometers 111 to 113 is connected to the control unitCONT. The measurement result of each of the interferometers 111 to 113is outputted to the control unit CONT. The control unit CONT candetermine the position of the second nozzle member 72 with respect tothe substrate stage PST in relation to the directions of six degrees offreedom (X axis, Y axis, Z axis, θX, θY, and θZ directions) based on themeasurement results of the plurality of interferometers 111 to 113. Thecontrol unit CONT drives the driving mechanisms 83 during the scanningexposure for the substrate P based on the determined positioninformation to adjust the positional relationship between the substratestage PST and the second nozzle member 72. In this case, theinformation, which relates to an optimum positional relationship betweenthe substrate stage PST and the second nozzle member 72, is previouslystored in the storage unit MRY connected to the control unit CONT. Thecontrol unit CONT adjusts at least one of the position and the postureof the second nozzle member 72 during the scanning exposure for thesubstrate P based on the storage information stored in the storage unitMRY so that the optimum positional relationship is maintained betweenthe substrate stage PST and the second nozzle member 72 based on thedetection result of the detector 100.

In the fourth embodiment, the storage unit MRY of the control unit CONTstores the information to be used in order that the distance between thesurface of the substrate P and the lower surface 72A of the secondnozzle member 72 is L1 (about 1 mm), and that the surface of thesubstrate P and the lower surface 72A are substantially parallel to eachother.

As described above, the control unit CONT adjusts at least one of theposition and the posture of the second nozzle member 72 (nozzle member70) based on the position information about the substrate stage PSTdetected by the detector 110, without using the detection result of thefocus/leveling-detecting system 30, so that the positional relationshipbetween the lower surface 72A of the second nozzle member 72 and thesurface of the substrate P can be maintained in the desired state.Alternatively, at least one of the position and the posture of thesecond nozzle member 72 (nozzle member 70) may be adjusted based on thedetection result of the focus/leveling-detecting system 30 and thedetection result of the detector 110 to maintain the positionalrelationship between the lower surface 72A of the second nozzle member72 and the surface of the substrate P to be in the desired state.Further alternatively, the detector 110 of this embodiment may beprovided for the exposure apparatus EX of the second embodimentdescribed above to adjust at least one of the position and theinclination of the nozzle member 70. Still alternatively, the detector110 of this embodiment may be provided for the exposure apparatus EX ofthe third embodiment described above to adjust at least one of theposition and the inclination of the second nozzle member 72.

Fifth Embodiment

Next, a fifth embodiment of the present invention will be explained withreference to FIG. 9. The feature of the fifth embodiment is that anozzle-adjusting mechanism 80′, which is provided to maintain at leastone of a relative distance and a relative inclination between the lowersurface 70A of the nozzle member 70 and the surface of the substrate Pto be in a predetermined state, includes a gas blow mechanism 150 whichhas blow ports 151 for blowing the gas against portions, of the surfaceof the substrate P (substrate portions), located outside the liquidimmersion area AR2.

With reference to FIG. 9, the first nozzle member 71, which has thesupply port 12 for supplying the liquid LQ, is connected to the barrelPK of the projection optical system PL without any gap. The secondnozzle member 72, which has the recovery port 22 for recovering theliquid LQ, is supported by the lower stepped portion 8 of the maincolumn 1 via a support mechanism 81′. The support mechanism 81′ isprovided with connecting members 82, and passive anti-vibrationmechanisms 84 which are provided between the lower stepped portion 8 andthe upper ends of the connecting members 82. Each of the passiveanti-vibration mechanisms 84 is constructed to include, for example, anair spring or a coil spring. That is, the support mechanism 81′ of thisembodiment does not have any driving mechanism 83 including anyactuator. The lower end of the connecting member 82 is connected to theupper surface of the second nozzle member 72.

Blow members 152, which have lower surfaces 152A opposite to (facing)the surface of the substrate P, are connected to an outer side surface72C of the second nozzle member 72 via connecting members 153respectively. The lower surfaces 152A of the blow members 152 aresubstantially flush with the lower surface 70A (71A, 72A) of the nozzlemember 70. The blow port 151, from which the gas is blown against thesurface of the substrate P, is provided on the lower surface 152A ofeach of the blow members 152. The gas blow mechanism 150 has a gassupply section 155. The gas, which is supplied from the gas supplysection 155, is blown from the blow ports 151 via a supply tube 154. Theliquid immersion mechanism 100 locally forms the liquid immersion areaAR2 of the liquid LQ on the substrate P in the same manner as in theembodiment described above. However, the blow ports 151 of the gas blowmechanism 150 allow the gas to be blown against the surface portions ofthe substrate P outside the liquid immersion area AR2 formed by theliquid immersion mechanism 100. The blow ports 151 of the gas blowmechanism 150 are provided so that the gas is allowed to be blownagainst the portions in the vicinity of the edge portion of the liquidimmersion area AR2.

FIG. 10 shows a plan view schematically illustrating a relationshipbetween the substrate P and the blow members 152 connected to the outerside of the second nozzle member 72. As shown in FIG. 10, three piecesof connecting members 153 are provided. The respective connectingmembers 153 are arranged at approximately equal intervals (120°intervals) in the circumferential direction (θZ direction) of the secondnozzle member 72. The three blow members 152, which are connected to theconnecting members 153, are also provided at approximately equalintervals (120° intervals), and are arranged to surround the secondnozzle member 72. Therefore, the plurality of blow ports 151, which aredisposed on the lower surfaces 152A of the blow members 152, areprovided to surround the second nozzle member 72. The gas supply amounts(gas blow amounts) per unit time, which are blown from the plurality ofblow ports 151 respectively, are set to have an approximately samevalue.

The nozzle-adjusting mechanism 80′ supports the second nozzle member 72connected to the blow members 152 via the connecting members 153 so thatthe second nozzle member 72 floats above the substrate P by a force ofthe gas blown against the surface of the substrate P from the blow ports151 provided for the blow members 152 of the gas blow mechanism 150. Thesecond nozzle member 72, which is supported in the floating manner withrespect to the substrate P, is maintained in terms of the relativedistance and the relative inclination with respect to the surface of thesubstrate P. Therefore, when the surface position of the substrate P ischanged during the scanning exposure for the substrate P, thenozzle-adjusting mechanism 80′, which includes the gas blow mechanism150, is capable of allowing at least one of the position and the postureof the second nozzle member 72 supported in the floating manner withrespect to the substrate P to follow the change of the surface positionof the substrate P. The passive anti-vibration mechanism 84, whichincludes the air spring or the coil spring, is provided between thelower stepped portion 8 of the main column 1 and the connecting member82 connected to the second nozzle member 72. Therefore, the secondnozzle member 72 is swingable with respect to the lower stepped portion8 of the main column 1 by the passive anti-vibration mechanism 84.Therefore, the second nozzle member 72 is not prevented from moving tofollow the surface position of the substrate P. The surface position ofthe substrate P can be detected by the focus/leveling-detecting systemor any other detecting system in the same manner as in the embodimentdescribed above.

In this embodiment, the gas blow mechanism 150 allows the gas to beblown against the portions in the vicinity of the edge portion of theliquid immersion area AR2. It is possible to suppress the expansion ofthe liquid immersion area AR2 and the outflow of the liquid LQ of theliquid immersion area AR2, owing to the flow of the gas, because the gasis blown against the portions in the vicinity of the edge portion of theliquid immersion area AR2. There is such a possibility that the gas(bubble) enters into and mixed with the liquid immersion area AR2 viathe edge portion of the liquid immersion area AR2, because the gas flowsin the vicinity of the liquid immersion area AR2. However, the recoveryport 22 is provided in the vicinity of the edge portion of the liquidimmersion area AR2. Therefore, even when the bubble enters into andmixed with the liquid immersion area AR2 via the edge portion of theliquid immersion area AR2, the bubble is immediately recovered from therecovery port 22. In addition, as explained with reference to FIG. 5,the flow of the liquid LQ supplied from the supply port 15 also preventsthe inflow of the bubble into the optical path for the exposure lightbeam EL, the bubble being entered into and mixed with the liquidimmersion area AR2 via the edge portion of the liquid immersion areaAR2. It is of course possible that the blow port 151 for allowing thegas to be blown is provided at any position away from the liquidimmersion area AR2. By doing so, it is possible to reduce thepossibility that the gas (bubble) enters into and mixes with the liquidimmersion area AR2.

In this embodiment, the three blow members 152 are provided. However,the number and the arrangement of the blow members 152 can bearbitrarily set provided that the second nozzle member 72 can besupported in the floating manner with respect to the substrate P.Alternatively, the blow member 152 may be an annular member whichsurrounds the second nozzle member 72. Blow ports 151 may be providedrespectively at a plurality of predetermined positions of the lowersurface 152A of the blow member 152 provided in the annular form. Inthis embodiment, the blow members 152 having the blow ports 151 areconnected to the second nozzle member 72. However, for example, the blowmember 152 having the blow port 151 may be connected to the nozzlemember 70 having both of the supply port 12 and the recovery port 22 asexplained with reference to FIG. 6. It is not necessarily indispensablethat the lower surface 70A of the nozzle member 70 and the lower surface152A of the blow member 152 are flush with each other under a conditionin which the liquid immersion area AR2 is formed satisfactorily.

Sixth Embodiment

Next, a sixth embodiment of the present invention will be explained withreference to FIG. 11. The feature of the sixth embodiment is that blowports 151 for blowing the gas are provided on the lower surface 70A ofthe nozzle member 70. More specifically, the blow ports 151 are providedon the lower surface 72A of the second nozzle member 72, and areprovided outside the recovery port 22 with respect to the optical axisAX of the projection optical system PL. In addition, suction ports 156for sucking the gas are provided outside the blow ports 151. Thenozzle-adjusting mechanism 80′ maintains the relative distance and therelative inclination between the lower surface 72A of the second nozzlemember 72 and the surface of the substrate P to be in a predeterminedstate by a balance between the gas blown from the blow ports 151 and thegas sucked via the suction ports 156. As described above, it is alsopossible to provide the blow ports 151 and the suction ports 156 on thelower surface 70A of the nozzle member 70. In this embodiment, thesecond nozzle member 72 can be supported satisfactorily in the floatingmanner with respect to the substrate P, because the suction ports 156for sucking the gas are provided. The suction ports 156 are providedoutside the liquid immersion area AR2 (at the positions away from theliquid immersion area AR2) with respect to the blow ports 151.Therefore, the inflow of the liquid LQ into the suction ports 156 issuppressed. It is of course allowable that the suction port 156 isprovided between the blow port 151 and the recovery port 22. The suctionport 156 may be provided on the lower surface 152A of the blow member152 as explained with reference to, for example, FIG. 9. Further, theblow port 151 and the suction port 156 may be provided on the lowersurface 70A of the nozzle member 70 having both of the supply port 12and the recovery port 22 as explained with reference to FIG. 6. In thelower surface 72A of the second nozzle member 72 shown in FIG. 11, it isnot necessarily indispensable that a surface portion, on which the blowport 151 is formed, is flush with a surface portion on which therecovery port 22 is formed, provided that the liquid immersion area AR2is formed satisfactorily. In the sixth embodiment also, the surfaceposition of the substrate P can be detected by using thefocus/leveling-detecting system or any other detecting system as in theembodiment described above. The support mechanism 81 adopted in thefirst to fourth embodiments may be used in combination with the blowport 151 and/or the suction port 156 adopted in the fifth and sixthembodiments.

The first to sixth embodiments described above are illustrative of acase in which the positional relationship between the surface of thesubstrate P and the lower surface of the nozzle member (70 or 72) ismaintained to be in the desired state when the liquid immersion area AR2is formed on the substrate P. However, at least one of the position andthe posture of the nozzle member (70, 72) can be adjusted in conformitywith the change in the surface position of the surface of the objectarranged opposite to the nozzle member (70, 72), for example, when theliquid immersion area AR2 is formed on the substrate stage PST or whenthe liquid immersion area AR2 is formed in a region ranging over thesubstrate P and the substrate stage PST. Therefore, if necessary, it ispossible to execute the adjustment of at least one of the position andthe posture (inclination) of the nozzle member (70, 72) during varioustypes of operations in which the liquid immersion area AR2 of the liquidLQ is formed on the side of the image plane of the projection opticalsystem PL, without being limited to the period in which the substrate Pis subjected to the scanning exposure.

In the first to sixth embodiments described above, at least one of theposition and the posture of the nozzle member is adjusted so that thesurface of the object (substrate P) and the lower surface of the nozzlemember (70, 72) are substantially parallel to one another at thepredetermined spacing distance. However, the relative distance and therelative inclination between the object (substrate P) and the nozzlemember (70, 72) can be adjusted to maintain the liquid immersion areaAR2 satisfactorily in consideration of, for example, the viscosity ofthe liquid LQ, the affinity of the surface of the object (substrate P)for the liquid LQ (contact angle of the liquid LQ on the objectsurface), and the movement velocity of the object (substrate P).

In the first to fourth embodiments described above, the position of thesubstrate P or the substrate stage PST is optically detected by usingthe focus/leveling-detecting system 30 or the detector 100 to adjust atleast one of the position and the posture (inclination) of the nozzlemember 70 based on the detection result. On the other hand, at least oneof the position and the posture (inclination) of the nozzle member (70,72) can be adjusted without performing the feedback control based on thedetection result of, for example, the focus/leveling-detecting system30. That is, the control unit CONT previously detects the surfaceposition information of the object surface (surface of the substrate P)before the scanning exposure for the substrate P, and the detectionresult is stored beforehand as a map data in the storage unit MRY. Thecontrol unit CONT can adjust at least one of the position and theposture (inclination) of the nozzle member (70, 72) by using the drivingmechanisms 83 based on the stored information (map data) stored in thestorage unit MRY, without using the focus/leveling-detecting system 30(or the detector 100). In this case, it is also allowable to omit thefocus/leveling-detecting system 30 detecting the surface positioninformation of the surface of the object (substrate P) in the vicinityof the side of the image plane of the projection optical system PL. Forexample, as disclosed in Japanese Patent Application Laid-open No.2002-158168, when the surface position information (map data) of thesubstrate P is to be obtained before the exposure on the measuringstation disposed away from the exposure station performing the exposurefor the substrate P, at least one of the position and the posture(inclination) of the nozzle member (70, 72) can be adjusted (subjectedto the feedforward control) based on the map data.

When the substrate stage PST, which supports the substrate P, is movedin the Z axis direction, the θX direction, and the θY direction based onthe driving operation of the substrate stage-driving mechanism PSTD, thecontrol unit CONT may adjust at least one of the position and theposture of the nozzle member 70, 72 by using the driving mechanisms 83depending on the driving amount of the substrate stage-driving mechanismPSTD. In this case also, the positional relationship between the surfaceof the object (substrate P) and the lower surface of the nozzle member(70, 72) can be maintained to be in the desired state without performingthe feedback control based on the detection result of, for example, thefocus/leveling-detecting system 30.

Seventh Embodiment

An exposure apparatus of this embodiment has approximately samecomponents and same structure as those of the exposure apparatus of thethird embodiment, except that the barrel of the projection opticalsystem PL is constructed of sub-barrels, and that the support mechanism81 has no driving mechanism for the nozzle plate. Therefore, in thefollowing description and FIGS. 12 to 15, the constitutive parts ofcomponents, which are same as or equivalent to those of the first andthird embodiments described above, are designated by the same referencenumerals, any explanation of which will be simplified or omitted.

As shown in FIGS. 12 and 13, the first nozzle member 71 of the exposureapparatus EX of this embodiment holds the first optical element LS1which is arranged closest to the image plane among a plurality ofoptical elements LS1 to LS6 constructing the projection optical systemPL. The first nozzle member 71 constitutes a part of the barrel PK inthe same manner as in the third embodiment.

As shown in FIG. 12, the projection optical system PL has the pluralityof optical elements LS1 to LS6 including the first optical element LS1provided at the end portion on a side of the substrate P. The opticalelements LS1 to LS6 are held by the barrel PK. The barrel PK isconstructed by combining a plurality of divided barrels (sub-barrels)SB. A sub-barrel, which is arranged closest to the image plane of theprojection optical system PL (on the −Z side) among the plurality ofsub-barrels SB and, is the first nozzle member 71 having the supplyports 12, and holds the first optical element LS1. That is, the firstnozzle member 71 is integrated with the sub-barrels SB to construct thebarrel PK as a whole.

The second nozzle member 72 is supported by the lower stepped portion 8of the main column 1 via the support mechanism 81. The support mechanism81 is provided with connecting members 82, and passive anti-vibrationmechanisms 84 which are provided between ends (upper ends) of theconnecting members 82 and the lower stepped portion 8. The other ends(lower ends) of the connecting members 82 are connected (fixed) to theupper surface of the second nozzle member 72. The support mechanism 81supports the second nozzle member 72 in a state in that the nozzlemember 72 is away from the first nozzle member 71 (barrel PK).

The second nozzle member 72 is an annular member similarly to the firstnozzle member 71. The second nozzle member 72 is provided to surround anouter side surface 71C of the first nozzle member 71 (barrel PK) in thevicinity of the side of the image plane of the projection optical systemPL. The second nozzle member 72 is provided away from the first nozzlemember 71 (barrel PK). A predetermined gap G6 is provided between theouter side surface 71C of the first nozzle member 71 (barrel PK) and aninner side surface 72S of the second nozzle member 72 supported by thesupport mechanism 81.

The supply ports 12 for supplying the liquid LQ onto the substrate P areprovided on the lower surface 71A of the first nozzle member 71. Therecovery port 22 is formed to have, for example, an annular slit-shapedform to surround the optical axis AX of the projection optical system PLon the lower surface 72A of the second nozzle member 72. In thisembodiment, a porous member (mesh member) 22P is arranged in therecovery port 22.

A possibility is assumed such that the gas existing in the gap G6 entersinto and mixes with the liquid LQ of the liquid immersion area AR2.However, the gap G6 is provided further outside, than the supply ports12, with respect to the optical path for the exposure light beam EL(projection area AR1). As schematically shown in FIG. 14, a part of theliquid LQ supplied from the supply ports 12 forms the flow of the liquiddirected to the outside of the supply ports 12 (see arrows y1 shown inFIG. 14). Therefore, even when any bubble is mixed from the gap G6 intothe liquid LQ of the liquid immersion area AR2, the bubble can be movedto the outside of the optical path for the exposure light beam EL by theflow of the part of the liquid LQ supplied from the supply ports 12.

As the substrate P is moved to perform the scanning exposure, there issuch a possibility that the liquid LQ of the liquid immersion area AR2,between the substrate P and the lower surface T1 of the projectionoptical system PL and the lower surfaces 71A, 72A of the first andsecond nozzle members 71, 72, is moved as if the liquid LQ is pulled bythe moving substrate P. For example, as shown in FIG. 15, there is sucha possibility that a part of the liquid LQ of the liquid immersion areaAR2 is moved in the +X direction in accordance with the movement of thesubstrate P in the +X direction. However, the gap G6 is formed betweenthe first nozzle member 71 and the second nozzle member 72, and theupper end of the gap G6 is open to the atmospheric air. Therefore, theliquid LQ can enter and exit the gap G6. Therefore, it is possible tosuppress the enormous expansion of the liquid immersion area AR2, andeven when the size (diameter) of the nozzle member 70 is small, it ispossible to suppress the outflow of the liquid LQ to the outside of therecovery port 22.

Eighth Embodiment

Next, an eighth embodiment of the exposure apparatus of the presentinvention will be explained with reference to FIG. 16. In the followingdescription and FIG. 16, the constitutive parts or components, which aresame as or equivalent to those of the first embodiment described above,are designated by the same reference numerals, any explanation of whichwill be simplified or omitted. An exposure apparatus of this embodimentincludes driving mechanisms 383 for driving the second nozzle member inthe same manner as in the first embodiment. However, each of the drivingmechanisms 383 functions as an active anti-vibration mechanism whichsuppresses the transmission of the vibration generated in the secondnozzle member 72 to the main column 1 (lower stepped portion 8). Thedriving mechanism 383 is not used to adjust the position and/or theinclination of the second nozzle member depending on the surfaceposition of the object (for example, the substrate P), unlike in thefirst embodiment. In this embodiment, the driving mechanism 383 will behereinafter referred to as “active anti-vibration mechanism”.

The support mechanism 81′ is provided with connecting members 82, andthe active anti-vibration mechanisms 383 which are provided between theupper ends of the connecting members 82 and the lower stepped portion 8.The active anti-vibration mechanism 383 actively avoids the vibrationfor the second nozzle member 72 with respect to the lower steppedportion 8 of the main column 1. The active anti-vibration mechanism 383includes, for example, an actuator such as a linear motor, a voice coilmotor or the like driven, for example, by the Lorentz's force. The voicecoil motor or the like, which is driven by the Lorentz's force, has acoil unit and a magnet unit. The coil unit and the magnet unit aredriven in a non-contact state. Therefore, when the driving mechanism 383is constructed of a driving mechanism which is driven by the Lorentz'sforce of the voice coil motor or the like, it is possible to suppressthe generation of the vibration.

The active anti-vibration mechanisms 383 are provided, for example, atsix positions (shown in a simplified manner in FIG. 16). The respectiveoperations of the active anti-vibration mechanisms 383 are controlled bythe control unit CONT. The control unit CONT uses the activeanti-vibration mechanisms 383 so that the second nozzle member 72, whichis connected to the connecting members 82, can be appropriately drivenin relation to the directions of six degrees of freedom (X axis, Y axis,Z axis, θX, θY, and θZ directions) with respect to the lower steppedportion 8 of the main column 1. The second nozzle member 72 is providedwith an acceleration-measuring unit 73 which measures the accelerationinformation of the second nozzle member 72. The acceleration-measuringunit 73 is provided as a plurality of acceleration-measuring units 73 sothat the acceleration information in relation to the directions of sixdegrees of freedom of the second nozzle member 72 can be measured. Thecontrol unit CONT drives the active anti-vibration mechanisms 383 basedon the measurement results of the acceleration-measuring units 73 toactively avoid the vibration so that any vibration generated in thesecond nozzle member 72 is not transmitted to the main column 1 (lowerstepped portion 8). The active anti-vibration mechanism 383 &so includesa passive anti-vibration member (attenuating member) such as a rubbermember, a spring or the like. The passive anti-vibration member can beused to satisfactorily reduce a high frequency component of thevibration which is to be transmitted from the second nozzle member 72 tothe main column 1. Further, a relatively low frequency component of thevibration is reduced by driving the active anti-vibration mechanisms383, to thereby making it possible to obtain the anti-vibration effectin a wide frequency zone by the active anti-vibration mechanisms 383. Itis considered that an extremely low frequency component (for example, afrequency component of not more than 1 Hz), among the vibrationcomponents of the second nozzle member 72, scarcely affects the patterntransfer accuracy onto the substrate P. Therefore, it is also possibleto construct the control system of the active anti-vibration mechanisms383 so that the anti-vibration control is not performed for suchfrequency components. Accordingly, it is possible to avoid theoscillation of the control system, and thus the control system can beconstructed with a relatively simple and convenient arrangement.

In this embodiment, the vibration is actively avoided based on theacceleration information of the second nozzle member 72. However, it isallowable that,for example, a position-measuring unit, which is capableof measuring the positional relationship between the second nozzlemember 72 and the main column 1 (lower stepped portion 8), is provided;and that the vibration is actively avoided by using the activeanti-vibration mechanisms 383 based on the measurement result of theposition-measuring unit. Alternatively, the vibration may be activelyavoided by using the active anti-vibration mechanisms 383 based on bothof the measurement result of the acceleration-measuring unit and themeasurement result of the position-measuring unit.

The active anti-vibration mechanism 383 can be applied to the exposureapparatus EX of the seventh embodiment described above. Further, thepassive anti-vibration mechanism, which is applied to the exposureapparatus of the seventh embodiment described above, can be also appliedto the exposure apparatus of the eighth embodiment.

As described above, the liquid LQ is pure water in the embodiments ofthe present invention. Pure water is advantageous in that pure water isavailable in a large amount with ease, for example, in a semiconductorproduction factory, and pure water exerts no harmful influence, forexample, on the optical element (lens) and the photoresist on thesubstrate P. Further, pure water exerts no harmful influence on theenvironment, and the content of impurity is extremely low. Therefore, itis also expected to obtain the function to wash (clean) the surface ofthe substrate P and the surface of the optical element provided at theend surface of the projection optical system PL. When the purity of purewater supplied from the factory or the like is low, it is also allowablethat the exposure apparatus is provided with an ultra purewater-producing unit.

It is approved that the refractive index n of pure water (water) withrespect to the exposure light beam EL having a wavelength of about 193nm is approximately 1.44. When the ArF excimer laser beam (wavelength:193 nm) is used as the light source of the exposure light beam EL, thenthe wavelength is shortened on the substrate P by 1/n, i.e., to about134 nm, and a high resolution is obtained. Further, the depth of focusis magnified about n times, i.e., about 1.44 times as compared with thevalue obtained in the air. Therefore, when it is enough to secure anapproximately equivalent depth of focus as compared with the case of theuse in the air, it is possible to further increase the numericalaperture of the projection optical system PL. Also in this viewpoint,the resolution is improved.

When the liquid immersion method is used as described above, thenumerical aperture NA of the projection optical system is 0.9 to 1.3 insome cases. When the numerical aperture NA of the projection opticalsystem is large as described above, it is desirable to use the polarizedillumination, because the image formation performance or the imagingperformance is deteriorated due to the polarization effect in some caseswith the random polarized light which has been hitherto used as theexposure light beam. In this case, it is preferable that the linearpolarized illumination, which is adjusted to the longitudinal directionof a line pattern of a line-and-space pattern of the mask (reticle), iseffected so that a diffracted light of the S-polarized light component(TE-polarized light component), i.e., the component in the polarizationdirection along with the longitudinal direction of the line pattern isdominantly allowed to exit from the pattern of the mask (reticle). Whenspace between the projection optical system PL and the resist coated onthe surface of the substrate P is filled with the liquid, the diffractedlight of the S-polarized light component (TE-polarized light component),which contributes to the improvement in the contrast, has the hightransmittance on the resist surface, as compared with the case in whichthe space between the projection optical system PL and the resist coatedon the surface of the substrate P is filled with the air (gas).Therefore, it is possible to obtain the high image formation performanceeven when the numerical aperture NA of the projection optical systemexceeds 1.0. Further, it is more effective to appropriately combine, forexample, a phase shift mask and the oblique incidence illuminationmethod (especially the dipole illumination method) adjusted to thelongitudinal direction of the line pattern as disclosed in JapanesePatent Application Laid-open No. 6-188169, in particular, thecombination of the linear polarized illumination method and the dipoleillumination method is effective when the periodic direction of theline-and-space pattern is restricted to one predetermined direction andwhen a hole pattern is clustered in one predetermined direction. Forexample, when a phase shift ask of the half tone type having atransmittance of 6% (pattern having a half pitch of about 45 nm) isilluminated by using the linear polarized illumination method and thedipole illumination method in combination, the depth of focus (DOF) canbe increased by about 150 nm as compared with a case using the randompolarized light provided that the illumination a, which is prescribed bythe circumscribed circle of the two light fluxes forming the dipole on apupil plane of the illumination system, is 0.95, the radius of each ofthe light fluxes at the pupil plane is 0.125σ, and the numericalaperture of the projection optical system PL is NA=1.2.

It is also effective to adopt a combination of the linear polarizedillumination and the small a illumination method (illumination methodwherein the a value, which indicates the ratio between the numericalaperture NAi of the illumination system and the numerical aperture NApof the projection optical system, is not more than 0.4).

For example, when the ArF excimer laser is used as the exposure lightbeam, and the substrate P is exposed with a fine line-and-space pattern(for example, line-and-space of about 25 to 50 nm) by using theprojection optical system PL having a reduction magnification of about¼, then the mask M acts as a polarizing plate due to the wave guideeffect depending on the structure of the mask M (for example, thepattern fineness and the thickness of chromium), and the diffractedlight of the S-polarized light component (TE-polarized light component)exits from the mask M in an amount larger than that of the diffractedlight of the P-polarized light component (TM-polarized light component)which lowers the contrast. In this case, it is desirable to use thelinear polarized illumination as described above. However, even when themask M is illuminated with the random polarized light, it is possible toobtain the high resolution performance even when the numerical apertureNA of the projection optical system PL is large, such as 0.9 to 1.3.

When the substrate P is exposed with an extremely fine line-and-spacepattern on the mask M, there is such a possibility that the P-polarizedlight component (TM-polarized light component) is larger than theS-polarized light component (TE-polarized light component) due to theWire Grid effect. However, for example, when the ArF excimer laser isused as the exposure light beam, and the substrate P is exposed with aline-and-space pattern larger than 25 nm by using the projection opticalsystem PL having a reduction magnification of about ¼, then thediffracted light of the S-polarized light component (TE-polarized lightcomponent) exits from the mask M in an amount larger than that of thediffracted light of the P-polarized light component (TM-polarized lightcomponent). Therefore, it is possible to obtain the high resolutionperformance even when the numerical aperture NA of the projectionoptical system PL is large, i.e., 0.9 to 1.3.

Further, it is also effective to use the combination of the obliqueincidence illumination method and the polarized illumination method inwhich the linear polarization is effected in the tangential(circumferential) direction of a circle having the center of the opticalaxis as disclosed in Japanese Patent Application Laid-open No. 6-53120,without being limited to only the linear polarized illumination(S-polarized illumination) adjusted to the longitudinal direction of theline pattern of the mask (reticle). In particular, when the pattern ofthe mask (reticle) includes not only a line pattern extending in onepredetermined direction, but the pattern also includes line patternsextending in a plurality of different directions in a mixed manner(line-and-space patterns having different periodic directions arepresent in a mixed manner), then it is possible to obtain the high imageformation performance even when the numerical aperture NA of theprojection optical system is large, by using, in combination, the zonalillumination method and the polarized illumination method in which thelight is linearly polarized in the tangential direction of the circlehaving the center of the optical axis, as disclosed in Japanese PatentApplication Laid-open No. 6-53120 as well. For example, when a phaseshift mask of the half tone type having a transmittance of 6% (patternhaving a half pitch of about 63 nm) is illuminated by using, incombination, the zonal illumination method (zonal ratio: 3/4) and thepolarized illumination method in which the light is linearly polarizedin the tangential direction of the circle having the center of theoptical axis, the depth of focus (DOF) can be increased by about 250 nmas compared with a case using the random polarized light provided thatthe illumination a is 0.95 and the numerical aperture of the projectionoptical system is NA=1.00. In a case of a pattern having a half pitch ofabout 55 nm and a numerical aperture of the projection optical systemNA=1.2, the depth of focus can be increased by about 100 nm.

In addition to the various types of illumination methods as describedabove, it is also effective to adapt the progressive multi-focalexposure method disclosed, for example, in Japanese Patent ApplicationLaid-open Nos. 4-277612 and 2001-345245 and the multiwavelength exposuremethod in which a same or equivalent effect as that of the progressivemulti-focal exposure method is obtained by using the multiwavelength(for example, two-wavelength) exposure light beam.

In the embodiment of the present invention, the optical element LS1 isattached to the end portion of the projection optical system PL. Such alens makes it possible to adjust the optical characteristics of theprojection optical system PL, for example, the aberration (for example,spherical aberration, coma aberration and the like). The opticalelement, which is attached to the end portion of the projection opticalsystem PL, may be an optical plate which is usable to adjust the opticalcharacteristics of the projection optical system PL.

When the pressure, which is generated by the flow of the liquid LQ, islarge between the substrate P and the optical element at the end portionof the projection optical system PL, it is also allowable that theoptical element is tightly fixed so that the optical element is notmoved by the pressure, instead of making the optical element to beexchangeable.

in the embodiment of the present invention, the space between theprojection optical system PL and the surface of the substrate P isfilled with the liquid LQ. However, for example, it is also allowablethat the space is filled with the liquid LQ in such a state that a coverglass constructed of a plane-parallel is attached to the surface of thesubstrate P.

In the case of the projection optical system concerning each of theembodiments described above, the optical path space on the side of theimage plane of the optical element arranged at the end portion, isfilled with the liquid. However, it is also possible to adopt such aprojection optical system that the optical path space on the side of themask in relation to the optical element arranged at the end portion, isalso filled with the liquid, as disclosed in International PublicationNo. 2004/019128.

In the embodiments described above, the explanation has been made asexemplified by the exposure apparatus provided with the projectionoptical system by way of example. However, the present invention is alsoapplicable to the exposure apparatus of a type having no projectionoptical system. In this case, the exposure light beam from the lightsource passes through the optical element, and the exposure light beamis radiated onto the liquid immersion area. For example, the presentinvention is also applicable to an exposure apparatus (lithographysystem) in which the substrate P is exposed with a line-and-spacepattern by forming interference fringes on the substrate P as disclosedin International Publication No. 2001/035168.

The structure of the liquid immersion mechanism 100 including the nozzlemember 70 and the like is not limited to those as described above, andmay be modified within the scope of the present invention. For example,it is possible to adopt structures described in European PatentPublication No. 1420298 and International Publication Nos. 2004/055803,2004/057589, 2004/057590, and 2005/029559.

The liquid LQ is water in the embodiment of the present invention.However, the liquid LQ may be any liquid other than water. For example,when the light source of the exposure light beam EL is the F₂ laser, theF₂ laser beam is not transmitted through water. Therefore, liquidspreferably usable as the liquid LQ may include, for example,fluorine-based fluids such as fluorine-based oil and perfluoropolyether(PFPE) through which the F₂ laser beam is transmissive. In this case, aportion, which makes contact with the liquid LQ, is subjected to aliquid-attracting treatment by forming, for example, a thin film with asubstance having a molecular structure containing fluorine having smallpolarity. Alternatively, other than the above, it is also possible touse, as the liquid LQ, liquids (for example, cedar oil) which have thetransmittance with respect to the exposure light beam EL, which have therefractive index as high as possible, and which are stable against thephotoresist coated on the surface of the substrate P and the projectionoptical system PL. In this case also, the surface treatment is performeddepending on the polarity of the liquid LQ to be used. It is alsopossible to use various fluids having desired refractive indexesincluding, for example, supercritical fluids, gases having highrefractive indexes and the like, in place of pure water as the liquidLQ.

The substrate P, which is usable in the respective embodiments describedabove, is not limited to the semiconductor wafer for producing thesemiconductor device. Applicable substrates include, for example, aglass substrate for the display device, a ceramic wafer for the thinfilm magnetic head, and a master plate (synthetic silica glass, siliconwafer) for the mask or the reticle to be used for the exposureapparatus. In the embodiment described above, the light-transmissivetype mask (reticle) is used, in which a predetermined light-shieldingpattern (or phase pattern, light-reducing (dimming) pattern or the like)is formed on the light-transmissive substrate. However, in place of sucha reticle, as disclosed, for example, in U.S. Pat. No. 6,778,257, it isalso allowable to use an electronic mask on which a transmissivepattern, a reflective pattern, or a light-emitting pattern is formedbased on an electronic data of the pattern to be subjected to theexposure.

As for the exposure apparatus EX, the present invention is alsoapplicable to the scanning type exposure apparatus (scanning stepper)based on the step-and-scan system for performing the scanning exposurewith the pattern of the mask M by synchronously moving the mask M andthe substrate P, as well as the projection exposure apparatus (stepper)based on the step-and-repeat system for performing the full fieldexposure with the pattern of the mask M in a state in which the mask Mand the substrate P are allowed to stand still, while successivelystep-moving the substrate P.

As for the exposure apparatus EX, the present invention is alsoapplicable to an exposure apparatus based on the system in which thefull field exposure is performed on the substrate P by using aprojection optical system (for example, the dioptric type projectionoptical system having a reduction magnification of ⅛ and including nocatoptric element) with a reduction image of a first pattern in a statein which the first pattern and the substrate P are allowed tosubstantially stand still. In this case, the present invention is alsoapplicable to the full field exposure apparatus based on the stitchsystem in which the full field exposure is further performed thereafteron the substrate P by partially overlaying a reduction image of a secondpattern with respect to the first pattern by using the projectionoptical system in a state in which the second pattern and the substrateP are allowed to substantially stand still. As for the exposureapparatus based on the stitch system, the present invention is alsoapplicable to the exposure apparatus based on the step-and-stitch systemin which at least two patterns are partially overlaid and transferred onthe substrate P, and the substrate P is successively moved.

The present invention is also applicable to a twin-stage type exposureapparatus. The structure and the exposure operation of the twin-stagetype exposure apparatus are disclosed, for example, in Japanese PatentApplication Laid-open Nos. 10-163099 and 10-214783 (corresponding toU.S. Pat. Nos. 6,341,007, 6,400,441, 6,549,269, and 6,590,634),Published Japanese Translation of PCT International Publication forPatent Application No. 2000-505958 (PCT) (corresponding to U.S. Pat. No.5,969,441), and U.S. Pat. No. 6,208,407, contents of which areincorporated herein by reference within a range of permission of thedomestic laws and ordinances of the state designated or selected in thisinternational application.

The present invention is also applicable to an exposure apparatusincluding the substrate stage which holds the substrate P and themeasuring stage which carries various photoelectric sensors andreference members formed with reference marks, as disclosed in JapanesePatent Application Laid-open No. 11-135400. In this case, when theliquid immersion area is formed on the measuring stage, it is desirableto adjust the position and/or the inclination of the nozzle member (70,72) depending on a position of the upper surface of the measuring stage.

As for the type of the exposure apparatus EX, the present invention isnot limited to the exposure apparatus for the semiconductor deviceproduction for exposing the substrate P with the semiconductor devicepattern. The present invention is also widely applicable, for example,to the exposure apparatus for producing the liquid crystal displaydevice or for producing the display as well as the exposure apparatusfor producing, for example, the thin film magnetic head, the imagepickup device (CCD), the reticle, or the mask.

When the linear motor is used for the substrate stage PST and/or themask stage MST, it is allowable to use any one of those of the airfloating type using the air bearing and those of the magnetic floatingtype using the Lorentz's force or the reactance force. Each of thestages PST, MST may be either of a type in which the movement iseffected along a guide or of a guideless type in which no guide isprovided. An example using the linear motor for the stage is disclosedin U.S. Pat. Nos. 5,623,853 and 5,528,118, contents of which areincorporated herein by reference respectively within a range ofpermission of the domestic laws and ordinances of the state designatedor selected in this international application.

As for the driving mechanism for each of the stages PST, MST, it is alsoallowable to use a plane motor in which a magnet unit provided withtwo-dimensionally arranged magnets and an armature unit provided withtwo-dimensionally arranged coils are opposed to each other, and each ofthe stages PST, MST is driven by the electromagnetic force. In thiscase, any one of the magnet unit and the armature unit may be connectedto the stage PST, MST, and the other of the magnet unit and the armatureunit may be provided on the side of the movable surface of the stagePST, MST.

The reaction force, which is generated in accordance with the movementof the substrate stage PST, may be mechanically released to the floor(ground) by using a frame member so that the reaction force is nottransmitted to the projection optical system PL, as described inJapanese Patent Application Laid-open No. 8-166475 (U.S. Pat. No.5,528,118). The contents of U.S. Pat. No. 5,528,118 are incorporatedherein by reference within a range of permission of the domestic lawsand ordinances of the state designated or selected in this internationalapplication.

The reaction force, which is generated in accordance with the movementof the mask stage MST, may be mechanically released to the floor(ground) by using a frame member so that the reaction force is nottransmitted to the projection optical system PL, as described inJapanese Patent Application Laid-open No. 8-330224 (U.S. Pat. No.5,874,820). The contents of U.S. Pat. No. 5,874,820 is incorporatedherein by reference within a range of permission of the domestic lawsand ordinances of the state designated or selected in this internationalapplication.

As described above, the exposure apparatus EX according to theembodiments of the present invention is produced by assembling thevarious subsystems including the respective constitutive elements asdefined in claims so that the predetermined mechanical accuracy,electric accuracy, and optical accuracy are maintained. In order tosecure the various accuracies, those performed before and after theassembling include the adjustment for achieving the optical accuracy forthe various optical systems, the adjustment for achieving the mechanicalaccuracy for the various mechanical systems, and the adjustment forachieving the electric accuracy for the various electric systems. Thesteps of assembling the various subsystems into the exposure apparatusinclude, for example, the mechanical connection, the wiring connectionof the electric circuits, and the piping connection of the air pressurecircuits in correlation with the various subsystems. It goes withoutsaying that the steps of assembling the respective individual subsystemsare performed before performing the steps of assembling the varioussubsystems into the exposure apparatus. When the steps of assembling thevarious subsystems into the exposure apparatus are completed, theoverall adjustment is performed to secure the various accuracies as theentire exposure apparatus. It is desirable that the exposure apparatusis produced in a clean room which the temperature, the cleanness and thelike are managed.

As shown in FIG. 17, a microdevice such as the semiconductor device isproduced by performing, for example, a step 201 of designing thefunction and the performance of the microdevice, a step 202 ofmanufacturing a mask (reticle) based on the designing step, a step 203of producing a substrate as a base material for the device, a substrateprocessing step 204 of exposing the substrate with a pattern of the maskby using the exposure apparatus EX of the embodiment described above, astep 205 of assembling the device (including processing steps such as adicing step, a bonding step, and a packaging step), and an inspectionstep 206. The substrate processing step 204 includes the process foradjusting the nozzle member as explained in the embodiments describedabove and the process for developing the substrate.

INDUSTRIAL APPLICABILITY

According to the present invention, the liquid can be satisfactorilyretained on the substrate, and the substrate can be exposed highlyaccurately with the fine pattern. Therefore, it is possible to producethe high density device having the desired performance.

1. An exposure apparatus which exposes a substrate with an exposurelight, the exposure apparatus comprising: a projection system having afinal optical element; a nozzle member having a liquid supply port fromwhich immersion liquid is supplied, having a liquid recovery port viawhich the supplied immersion liquid is recovered and a gas supply portvia which a gas is supplied, the liquid supply port, the liquid recoveryport and the gas supply port facing downwardly, the liquid recovery portbeing arranged radially outward of the liquid supply port with respectto a path of the exposure light, and the gas supply port being arrangedradially outward of the liquid recovery port with respect to the path; anozzle driving system having an actuator by which the nozzle member ismoved; a substrate stage having a holder on which the substrate is held;a stage driving system by which the substrate stage is moved below andrelative to the projection system and the nozzle member; and acontroller, wherein the substrate is exposed with the exposure lightthrough the immersion liquid in a liquid immersion area which covers aportion of an upper surface of the substrate and which is formed whilesupplying the immersion liquid via the liquid supply port, supplying thegas via the gas supply port and recovering the supplied immersion liquidvia the liquid recovery port, and the controller controls the nozzledriving system based on information on a movement of the substratestage.
 2. The exposure apparatus according to claim 1, wherein theinformation of the movement of the substrate stage includes a movementamount of the substrate stage.
 3. The exposure apparatus according toclaim 1, wherein the nozzle member further has a suction port.
 4. Theexposure apparatus according to claim 3, wherein the suction port isarranged radially outward of the gas supply port with respect to thepath of the exposure light.